Patent US3315879A successfully refreshed from Google Patents.
Patent US3745073A successfully refreshed from Google Patents.
US3745073A
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US
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Single-step process for making p-n junctions in zinc selenide
Assignee: Zenith Electronics LLC
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Filing: 1971-02-26
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Granted: 1973-07-10
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Expires: 1991-02-26
Abstract
Abstract P-N JUNCTIONS ARE FORMED BY SIMULTANEOUS DOPING OF A THIN SURFACE LAYER OF AN N-TYPE ZINC SELENIDE SUBSTRATE WITH ZINC AND WITH GALLIUM, INDIUM OR THALLIUM. DOPING MAY BE EFFECTED BY VAPOR PHASE IN-DIFFUSION OR BY SUBMERSION OF THE SUBSTRATE IN AN ALLOY MELT CONTAINING BOTH DOPANTS.
Inventors
- 👤 Z Kun
- 👤 R Robinson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 21:32
CPC Classifications
H; H10; H10P; H10P32/00; H10P32/10; H10P32/12; H10P32/16; H10P32/17; Y; Y10; Y10S; Y10S148/00; Y10S148/151; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-09 | 1977-01-08 | 1977-07-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-09 | 1981-01-08 | 1981-07-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-09 | 1985-01-08 | 1985-07-10 | $7700.00 | Window Closed / Lapsed |