Radiation-sensitive semiconductor target for a camera tube
Abstract
Abstract A radiation-sensitive semiconductor device particularly suitable as a photoconductive target for a camera tube sensitive to long wavelength radiation is constituted by a first layer of semiconductor material having a relatively small band gap, i.e., less than 1.5 eV and a superimposed layer of a semiconductor material having a relatively large band gap, i.e., greater than 1.5 eV. The first layer upon absorbing the incident radiation, generates charge carriers which are injected into the superimposed layer of larger band gap and hence of greater resistivity. The surface of the second layer may then be scanned by an electron beam in conventional manner to derive an output signal indicative of the radiation image impinging on the first layer.
Inventors
- 👤 M Berth
- 👤 F Desvignes
- 👤 C Piaget
Bibliographic Details
Claims Analysis
Total Claims: 3References Cited (Backward Citations)
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