US3740689A
Expired / Lapsed
US
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Mechano-electrical transducer device
Assignee: Panasonic Holdings Corp
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Filing: 1971-11-30
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Granted: 1973-06-19
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Expires: 1991-11-30
Abstract
Abstract A mechano-electrical transducer device having a high stress sensitivity and high reliability comprising a semiconductor device including a thin single crystal semiconductor wafer having a narrow portion, said semiconductor device having a controllable function.
Inventors
- 👤 A Yamashita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:45
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/40; H10D84/401; H10D84/403; H10D84/406; H10D99/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
63 words
A mechano-electrical transducer device comprising a fieldeffect type semiconductor device being controllable by an electric field including a semiconductor wafer having an extremely small thickness compared with the length and a narrow portion in a direction other than the thickness direction, said semiconductor wafer being adapted to be applied with a stress to change the characteristics of said field effect type semiconductor device.
Claim 2
Dependent Claim
63 words
A mechano-electrical transducer device comprising a fieldeffect type semiconductor device being controllable by an electric field including a semiconductor wafer having an extremely small thickness compared with the length and a narrow portion in a direction other than the thickness direction, said semiconductor wafer being adapted to be applied with a stress to change the characteristics of said field effect type semiconductor device.
Claim 3
Dependent Claim
18 words
A mechano-electrical transducer device according to claim 1, in which said semiconductor wafer has a p-i-n type structure.
Claim 4
Dependent Claim
18 words
A mechano-electrical transducer device according to claim 1, in which said semiconductor wafer has a p-n-p type structure.
Claim 5
Dependent Claim
18 words
A mechano-electrical transducer device according to claim 1, in which said semiconductor wafer has an n-p-n type structure.
Claim 6
Dependent Claim
35 words
A mechano-electrical transducer device according to claim 3, in which said semiconductor device includes an electrode associating with at least one of said p-type regions and at least two electrodes associating with said n-type region.
Claim 7
Dependent Claim
35 words
A mechano-electrical transducer device according to claim 4, in which said semiconductor device includes an electrode associating with at least one of said n-type regions and at least two electrodes associating with said p-type region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-18 | 1976-12-18 | 1977-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-18 | 1980-12-18 | 1981-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-18 | 1984-12-18 | 1985-06-19 | $7700.00 | Window Closed / Lapsed |