Patent US3740622A successfully refreshed from Google Patents.
US3740622A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Electroluminescent semiconductor device for generating ultra violet radiation
Assignee: RCA Corp
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Filing: 1972-07-10
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Granted: 1973-06-19
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Expires: 1992-07-10
Abstract
Abstract An electroluminescent semiconductor device including a body of crystalline gallium nitride, a layer of silicon nitride on a surface of the body, a metal layer on the silicon nitride layer and an ohmic metal contact on the body. When a bias is applied between the metal layer and the contact which with respect to the ohmic contact is first negative and then positive, ultra violet radiation will be emitted from the body.
Inventors
- 👤 J Pankove
- 👤 P Norris
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 16:30
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/013; H10H20/0133; H10H20/01335; H10H20/052
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
23 words
An electroluminescent semiconductor device in accordance with cLaim 1 in which the insulating layer is of a thickness of 700 to 1000 Angstroms.
Claim 2
Dependent Claim
25 words
An electroluminescent semiconductor device in accordance with claim 2 in which the body is epitaxial gallium nitride on a substrate of an electrically insulating material.
Claim 3
Dependent Claim
16 words
An electroluminescent semiconductor device in accordance with claim 3 in which the substrate is of sapphire.
Claim 4
Dependent Claim
36 words
An electroluminescent semiconductor device in accordance with claim 1 in which the body has two opposed parallel sides at least one of which is partially reflective and partially transparent so as to provide a Fabry-Perot cavity.
Claim 5
Dependent Claim
90 words
An electroluminescent semiconductor device comprising a body of crystalline N type conductivity gallium nitride, a layer of an electrically insulating silicon nitride on a surface of said body, an electrically conductive layer on said silicon nitride layer, an electrically conductive contact in ohmic engagement with said body, and means for applying between said conductive layer and said contact bi-polar pulses of voltage each one of which is first negative with respect to said contact and then positive with respect to said contact so as to generate radiation in said body.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-18 | 1976-12-18 | 1977-06-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-18 | 1980-12-18 | 1981-06-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-18 | 1984-12-18 | 1985-06-19 | $7700.00 | Window Closed / Lapsed |