Patent US3739243A successfully refreshed from Google Patents.
US3739243A
Expired / Lapsed
US
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Semiconductor device for producing or amplifying electric oscillations
Assignee: US Philips Corp
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Filing: 1972-05-16
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Granted: 1973-06-12
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Expires: 1992-05-16
Abstract
Abstract A Tunnel Transit Time Microwave Device is described, employing a Schottky barrier.
Inventors
- 👤 A Semichon
- 👤 J Michel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 22:03
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D8/00; H10D8/70; H10D99/00
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
179 words
A semiconductor device for producing or amplifying electric oscillations and comprising a tunnel-transit time diode, said diode comprising a body having a first layer of silicon semiconductor material with a relatively high doping at its surface of at least 1018 atoms per cubic centimeter, a second metal in contact with said doped surface of the layer and forming with the layer a rectifying contact and a metal-semiconductor junction, a third region of a material forming a good electrically conducting contact with the layer, and means for applying across the second metal and the third region a potential of such polarity as to reverse bias the metal-semiconductor junction, the doping of said first layer surface in contact with the second metal being so high as to enable charge carriers to tunnel across said reverse biased metal-semiconductor junction into the first layer, said reverse bias potential being of such magnitude as to form a depletion region in the first layer and to cause the tunneling charge carriers to travel across the first layer in the depletion region at their saturation rate.
Claim 2
Dependent Claim
179 words
A semiconductor device for producing or amplifying electric oscillations and comprising a tunnel-transit time diode, said diode comprising a body having a first layer of silicon semiconductor material with a relatively high doping at its surface of at least 1018 atoms per cubic centimeter, a second metal in contact with said doped surface of the layer and forming with the layer a rectifying contact and a metal-semiconductor junction, a third region of a material forming a good electrically conducting contact with the layer, and means for applying across the second metal and the third region a potential of such polarity as to reverse bias the metal-semiconductor junction, the doping of said first layer surface in contact with the second metal being so high as to enable charge carriers to tunnel across said reverse biased metal-semiconductor junction into the first layer, said reverse bias potential being of such magnitude as to form a depletion region in the first layer and to cause the tunneling charge carriers to travel across the first layer in the depletion region at their saturation rate.
Claim 3
Dependent Claim
22 words
A device as set forth in claim 1 wherein the relatively highly doped surface has a thickness of 1 micron or less.
Claim 4
Dependent Claim
49 words
A device as set forth in claim 2 wherein the first layer comprises a substrate portion of one type conductivity and a surface portion of the same type conductivity but of different magnitude, said second metal being on the surface portion, and the third region contacting the substrate portion.
Claim 5
Dependent Claim
29 words
A device as set forth in claim 2 wherein the surface portion comprises successive zones of different doping concentrations with the second metal on the zone of higher doping.
Claim 6
Dependent Claim
26 words
A device as set forth in claim 2 wherein the higher doping zone has a doping concentration gradient that decreases from the surface into the bulk.
Claim 7
Dependent Claim
36 words
A device as set forth in claim 2 wherein the first layer has two parts, a first thin surface part with the said relatively high doping, and a second thicker part with a lower doping level.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-11 | 1976-12-11 | 1977-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-11 | 1980-12-11 | 1981-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-11 | 1984-12-11 | 1985-06-12 | $7700.00 | Window Closed / Lapsed |