Patent US3738880A successfully refreshed from Google Patents.
US3738880A
Expired / Lapsed
US
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Method of making a semiconductor device
Assignee: RCA Corp
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Filing: 1971-06-23
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Granted: 1973-06-12
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Expires: 1991-06-23
Abstract
Abstract PORTIONS OF A POLYCRYSTALLINE SILICON LAYER DISPOSED OF A SILICON DIOXIDE INSULATING LAYER ON A SEMICONDUCTOR WAFER ARE REMOVED AFTER DIFFUSING BORON INTO AND THROUGH THE REGIONS TO BE RETAINED. GOOD EDGE DEFINITION OF THE RETAINED SILICON AND IMPROVED YIELDS RESULTING FROM FEWER OXIDE PINHOLES ARE ACHIEVED.
Inventors
- 👤 A Laker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/262; H10P50/263; H10P50/60; H10P50/66; H10P50/663; H10P50/667; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/051; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/924
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-11 | 1976-12-11 | 1977-06-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-11 | 1980-12-11 | 1981-06-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-11 | 1984-12-11 | 1985-06-12 | $7700.00 | Window Closed / Lapsed |