Method of producing thin layers on a support
Abstract
Abstract While it is possible to diffuse P impurities into compounds of gallium and arsenic that are useful in producing light emitting PN junctions, at the present state of the art it is not possible to diffuse N type impurities thereinto whereby at the present state of the art thin layers of N type material of gallium and arsenic compounds cannot readily be obtained. The light produced by the PN junction in a light emitting diode is much more greatly absorbed by the P layer than by the N layer, whereby it is advantageous to produce a very thin N type layer in the production of the light emitting PN junctions. A method is disclosed for providing a very thin layer of N type material, the material being a compound of gallium and arsenic that may or may not include other elements that is useful in light emitting diodes.
Inventors
- 👤 D Zoroglu
- 👤 W George
Bibliographic Details
Claims Analysis
Total Claims: 2References Cited (Backward Citations)
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