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Patent US3737347A successfully refreshed from Google Patents.
US3737347A
Expired / Lapsed
US
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Graded impurity profile in epitaxial films to improve integrated circuit performance
Assignee: Fairchild Semiconductor Corp
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Filing: 1970-02-26
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Granted: 1973-06-05
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Expires: 1990-02-26
Abstract
Abstract IN A MONOLITHIC SILICON INTEGRATED CIRCUIT HAVING NPN AND SUBSTRATE PNP TRANSISTORS THEREIN, A SUBSTRATE HAS A LAYER OF INTRINSIC SILICON DEPOSITED OVER ITS SURFACE PRIOR TO AND AS PART OF GROWING AN EPITAXIAL REGION ON LAYER. THE INTRINSIC LAYER ENABLES A NARROW PNP WIDTH BASE AND A GRADED JUNCTION TO BE FORMED INCIDENT TO THE FABRICATION OF THE NPN AND PNP.
Inventors
- 👤 G Alcott
- 👤 I Bennett
- 👤 G Secrest
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 20:20
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/67; H10D84/673; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/098; Y10S148/151; Y10S438/00; Y10S438/936
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-04 | 1976-12-04 | 1977-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-04 | 1980-12-04 | 1981-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-04 | 1984-12-04 | 1985-06-05 | $7700.00 | Window Closed / Lapsed |