Patent US3737340A successfully refreshed from Google Patents.
US3737340A
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US
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Method of manufacturing semiconductor device with multilayer wiring structure
Assignee: Fujitsu Ltd
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Filing: 1970-12-23
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Granted: 1973-06-05
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Expires: 1990-12-23
Abstract
Abstract A SEMICONDUCTOR DEVICE WITH MULTILAYER WIRING STRUCTURE CAN BE FORMED BY THE USE OF A MIXED FILM THE MAIN CONSTITUENTS OF WHICH ARE A METAL OXIDE AND A SILICON OXIDE ARE USED FOR BOTH WIRING AND INSULATION. A WIRING LAYER IN A MULTILAYER WIRING STRUCTURE IS FORMED BY A CONDUCTIVE LAYER CONVERTED FROM A MIXED FILM AND IS BURIED IN THE MIXED FILM. THE MIXED FILM IS FORMED BY THE GASEOUS PHASE DECOMPOSITION OF A METAL COMPLEX AND A SILICON COMPOUND WITHIN AN OZIDIZING ATMOSPHERE.
Inventors
- 👤 K Maeda
- 👤 Y Sasaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:59
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P14/00; H10P14/40; H10P14/412; H10P95/00; H10W20/01; H10W20/031; H10W20/064; H10W20/065; H10W74/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/043; Y10S148/049; Y10S438/00; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-06-04 | 1976-12-04 | 1977-06-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-06-04 | 1980-12-04 | 1981-06-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-06-04 | 1984-12-04 | 1985-06-05 | $7700.00 | Window Closed / Lapsed |