Regenerative sweep circuits using field effect transistors

Claim 2

A circuit having a steady-state region and a Miller sweep region of operation for developing a regenerative sweep signal at the output terminal of said circuit comprising: a first field effect transistor responsive to an applied signal for initiating said sweep signal; a second field effect transistor, responsive to the output signal of said first field effect transistor, for switching said circuit from said steady-state region into said Miller sweep region; a capacitor connected between said output terminal and the input of said first transistor; and a third field effect transistor responsive to the output signals of said first and second transistors and having said circuit output terminal connected to the output thereof for cooperating with said first and second transistors so as to draw a substantially constant current through said capacitor, thereby causing the voltage of said output terminal to change linearly with time.

Claim 3

A circuit for developing a regenerative sweep signal in response to an applied trigger pulse comprising: a first field effect transistor for inverting and amplifying said applied trigger pulse; a second field effect transistor connected to the output of said first transistor; and a third field effect transistor connected to the outputs of said first and second transistors, said third transistor interacting with said second transistor to produce a first unstable region of positive feedback in said circuit in response to said inverted and amplified trigger pulse, said circuit responsively switching into a negative feedback region, said third transistor also interacting with said second transistor to switch said circuit out of said negative feedback region by producing a second unstable region of positive feedback in said circuit a preselected time after said switching of said circuit into said negative feedback region.

Claim 4

A circuit for developing a regenerative sweep signal in response to an applied trigger pulse comprising: a first field effect transistor for inverting and amplifying said applied trigger pulse; a second field effect transistor connected to the output of said first transistor; and a third field effect transistor connected to the outputs of said first and second transistors, said third transistor interacting with said second transistor to produce a first unstable region of positive feedback in said circuit in response to said inverted and amplified trigger pulse, said circuit responsively switching into a negative feedback region, said third transistor also interacting with said second transistor to switch said circuit out of said negative feedback region by producing a second unstable region of positive feedback in said circuit a preselected time after said switching of said circuit into said negative feedback region.

Claim 5

The circuit of claim 2 wherein said field effect transistors are metal oxide semiconductor field effect transistors.

Claim 6

The circuit of claim 3 wherein said second positive feedback region is produced by said second metal oxide semiconductor field effect transistor entering its constant-current region.

Claim 7

The circuit of claim 3 wherein said second positive feedback region is produced by said third metal oxide semiconductor field effect transistor entering its constant-current region.

Claim 8

The circuit of claim 3 wherein a capacitor is connected between said first metal oxide semiconductor field effect transistor and said third metal oxide semiconductor field effect transistor.

Claim 9

The circuit of claim 3 wherein a capacitor is connected between said first metal oxide semiconductor field effect transistor and said second metal oxide semiconductor field effect transistor.

Claim 10

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate being connected to said first source of constant potential; a second source of constant potential; a first resistor connected between said drain of said first transistor and said second source of constant potential; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor; a second resistor connected between said drain of said second transistor and said second source of constant potential; a third resistor connected between said source of said second transistor and a fixed potential; a third field effect transistor having a drain which is connected to said second source of constant potential, a gate which is connected to said gate of said second transistor, and a source which is connected to said source of said second transistor; and a capacitor connected between said drain of said second transistor and said gate of said first transistor.

Claim 11

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate being connected to said first source of constant potential; a second source of constant potential; a first resistor connected between said drain of said first transistor and said second source of constant potential; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor; a second resistor connected between said drain of said second transistor and said second source of constant potential; a third resistor connected between said source of said second transistor and a fixed potential; a third field effect transistor having a drain which is connected to said second source of constant potential, a gate which is connected to said gate of said second transistor, and a source which is connected to said source of said second transistor; and a capacitor connected between said drain of said second transistor and said gate of said first transistor.

Claim 12

The circuit of claim 8 wherein said field effect transistors are metal oxide semiconductor field effect transistors.

Claim 13

The circuit of claim 9 wherein said metal oxide semiconductor field effect transistors are of the N-channel type.

Claim 14

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate of said first transistor being connected to said first source of constant potential; a second source of constant potential; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being connected to said second source of constant potential; a first resistor connected between said drain of said first transistor and said drain of said second transistor; a third source of constant potential; a third field effect transistor having a gate, a source, and a drain, said gate being connected to said third source of constant potential, and said source being connected to said drain of said second transistor; a fourth source of constant potential; a second resistor connected between said fourth source of constant potential and said drain of said third transistor; and a capacitor connected between said drain of said third transistor and said gate of said first transistor.

Claim 15

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate of said first transistor being connected to said first source of constant potential; a second source of constant potential; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being connected to said second source of constant potential; a first resistor connected between said drain of said first transistor and said drain of said second transistor; a third source of constant potential; a third field effect transistor having a gate, a source, and a drain, said gate being connected to said third source of constant potential, and said source being connected to said drain of said second transistor; a fourth source of constant potential; a second resistor connected between said fourth source of constant potential and said drain of said third transistor; and a capacitor connected between said drain of said third transistor and said gate of said first transistor.

Claim 16

The circuit of claim 11 wherein said field effect transistors are metal oxide semiconductor field effect transistors.

Claim 17

The circuit of claim 12 wherein said first and said third metal oxide semiconductor field effect transistors are of the N-channel type and said second metal oxide semiconductor field effect transistor is of the P-channel type.

Claim 18

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate being connected to said first source of constant potential; a second source of constant potential; a first resistor connected between said second source of constant potential and said drain of said first transistor; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor; a second resistor connected between said second source of constant potential and said drain of said second transistor; a third source of constant potential; a third field effeCt transistor having a gate, a source, and a drain, said drain being connected to said source of said second transistor and said gate of said third transistor being connected to said gate of said second transistor; a third resistor connected between said third source of constant potential and said source of said third transistor; a common terminal of fixed potential connected to said source of said first transistor; a fourth resistor connected between said common terminal and said source of said second transistor; and a capacitor connected between said source of said second transistor and said gate of said first transistor.

Claim 19

A field effect transistor regenerative sweep circuit comprising: a first source of constant potential; a first field effect transistor having a gate, a source, and a drain, said gate being connected to said first source of constant potential; a second source of constant potential; a first resistor connected between said second source of constant potential and said drain of said first transistor; a second field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor; a second resistor connected between said second source of constant potential and said drain of said second transistor; a third source of constant potential; a third field effeCt transistor having a gate, a source, and a drain, said drain being connected to said source of said second transistor and said gate of said third transistor being connected to said gate of said second transistor; a third resistor connected between said third source of constant potential and said source of said third transistor; a common terminal of fixed potential connected to said source of said first transistor; a fourth resistor connected between said common terminal and said source of said second transistor; and a capacitor connected between said source of said second transistor and said gate of said first transistor.

Claim 20

The circuit of claim 14 wherein said field effect transistors are metal oxide semiconductor field effect transistors.

Claim 21

The circuit of claim 15 wherein said first and said second metal oxide semiconductor field effect transistors are of the N-channel type and said third metal oxide semiconductor field effect transistor is of the P-channel type.

Claim 22

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being resistively connected to said common terminal; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being resistively connected to said source of said second transistor; and a capacitor connected between said drain of said second transistor and said gate of said first transistor.

Claim 23

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being resistively connected to said common terminal; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor, and said source being resistively connected to said source of said second transistor; and a capacitor connected between said drain of said second transistor and said gate of said first transistor.

Claim 24

The circuit of claim 17 further comprising: biasing means connected to the drains of said transistors.

Claim 25

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said drain being resistively connected to said drain of said first transistor; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said drain of said second transistor; and a capacitor connected between said drain of said third transistor and said gate of said first transistor.

Claim 26

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said drain being resistively connected to said drain of said first transistor; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said drain of said second transistor; and a capacitor connected between said drain of said third transistor and said gate of said first transistor.

Claim 27

The circuit of claim 19 further comprising: a first source of constant potential connected to said source of said second transistor; a second source of constant potential connected to said gate of said third transistor; and a third source of constant potential connected to said drain of said third transistor.

Claim 28

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said source being resistively connected to said common terminal; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said drain being resistively connected to said common terminal; and a capacitor connected between said source of said second transistor and said gate of said first transistor.

Claim 29

A circuit for developing a regenerative sweep signal comprising: a common terminal of fixed potential; a first metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said source being connected to said common terminal; a second metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said source being resistively connected to said common terminal; a third metal oxide semiconductor field effect transistor having a gate, a source, and a drain, said gate being connected to said drain of said first transistor and said drain being resistively connected to said common terminal; and a capacitor connected between said source of said second transistor and said gate of said first transistor.

Claim 30

The circuit of claim 21 further comprising: a first source of constant potential resistively connected to said drain of said first transistor and resistively connected to said drain of said second transistor; and a second source of constant potential resistively connected to said source of said third transistor.