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US3735369A
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Magnetic memory employing force detecting element
Assignee: Individual
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Filing: 1970-09-24
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Granted: 1973-05-22
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Expires: 1990-09-24
Abstract
Abstract This invention relates to a memory device using a magnetized ferromagnetic element of an arbitrary shape, a current path penetrating through or closely contacting said element and a force-detecting means which detects a force F, resulting from said ferromagnetic element when a current flows through said path and being represented by
Inventors
- 👤 S Iida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:30
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/02
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
57 words
A non-destructive readout memory device comprising a magnetized ferromagnetic element, a current path passing through the element and detecting means reacting to the Lorentz force produced in the element by the interaction between the static magnetization of the element and an electric current passing through said current path which does not alter the magnetization of the element.
Claim 2
Dependent Claim
57 words
A non-destructive readout memory device comprising a magnetized ferromagnetic element, a current path passing through the element and detecting means reacting to the Lorentz force produced in the element by the interaction between the static magnetization of the element and an electric current passing through said current path which does not alter the magnetization of the element.
Claim 3
Dependent Claim
52 words
A memory device as in claim 1, wherein said ferromagnetic element is a thin metallic film, said detecting means is a piezo dielectric element placed in contact with said thin film and wherein said current path passes through said thin film and said force induces a voltage in said piezo dielectric element.
Claim 4
Dependent Claim
50 words
A memory device as in claim 1, wherein said ferromagnetic element is an insulating magnetic element, said current path is a conductive tape passing therethrough, said detecting means is a pressure sensitive semiconductor and wherein current flows through said conductive tape and said force changes the resistance of said semiconductor.
Claim 5
Dependent Claim
65 words
A memory device as in claim 1, wherein the force is represented by the formula F Integral ((-$.M) HI + (i/c) X H'')dv where M is the magnetization, i is the current density, HI is the magnetic field produced by the current i, H'' is the remaining magnetic field after HI is removed from the total magnetic field and c is the velocity of light.
Claim 6
Dependent Claim
29 words
A memory device as in claim 4, wherein the value Integral (i/c) X H'' dv is not more than 50 percent of the value of Integral (-$.M) Hi dv
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-21 | 1976-11-20 | 1977-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-21 | 1980-11-20 | 1981-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-21 | 1984-11-20 | 1985-05-22 | $7700.00 | Window Closed / Lapsed |