Semiconductor device package with energy absorbing layer
Abstract
Abstract There is disclosed a semiconductor device comprising a body of semiconductor material having at least one region of P conductivity type and a second region of N conductivity type defining a P-N junction therebetween. The body is bonded to a header having electrically isolated terminals extending therefrom. A lead wire is bonded to at least one of said conductivity regions and to one of said terminals. A closure member is secured to said header and the closure member and the header are surrounded by an energy absorbing layer of high atomic number particle impregnated resilient material. The particles have a diameter of between 0.25 and 1.0 mil and are approximately 50 percent by volume of said layer. The resilient material is preferably a highly plastisized polyvinyl chloride and the high atomic number particles are preferably tungsten carbide.
Inventors
- 👤 I Saddler
Bibliographic Details
Claims Analysis
Total Claims: 4References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-21 | 1976-11-20 | 1977-05-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-21 | 1980-11-20 | 1981-05-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-21 | 1984-11-20 | 1985-05-22 | $7700.00 | Window Closed / Lapsed |