Patent US3732471A successfully refreshed from Google Patents.
US3732471A
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Method of obtaining type conversion in zinc telluride and resultant p-n junction devices
Assignee: Corning Glass Works
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Filing: 1969-11-10
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Granted: 1973-05-08
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Expires: 1989-11-10
Abstract
Abstract A method of making p-n junction devices by bombarding a polished crystal of ZnTe with ions of an element selected from the Group VII A elements and p-n junction devices resulting from this method. When the crystal is held at an elevated temperature during the ion bombardment step, subsequent annealing is usually not necessary. When the crystal temperature is at room temperature or below during the ion bombardment step, type conversion can be obtained only by post implantation annealing. The particular type of p-n junction device and the characteristics thereof are determined by the particular schedule of annealing to which the implanted body is subjected.
Inventors
- 👤 S Hou
- 👤 J Marley
- 👤 K Beck
- 👤 M Beck
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:15
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/134; H10F99/00; H10H; H10H20/00; H10H20/80; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/21; H10P30/28; H10P50/00; H10P50/20; H10P52/00; H10P95/00; H10P95/70
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
11 words
The method of claim 1 wherein said dopant element is fluorine.
Claim 2
Dependent Claim
29 words
The method of claim 1 wherein said annealing step comprises preheating said body to said temperature and maintaining said temperature during the step of implanting ions into said body.
Claim 3
Dependent Claim
34 words
The method of claim 1 wherein said ion implantation step is performed at a temperature which is less than said annealing temperature and said annealing step is performed subsequent to said ion implantation step.
Claim 4
Dependent Claim
24 words
The method of claim 4 wherein said period of time for which said body is annealed is between one and five and one-half hours.
Claim 5
Dependent Claim
17 words
The method of claim 4 wherein said annealing is performed in an atmosphere including an inert gas.
Claim 6
Dependent Claim
11 words
The method of claim 6 wherein said atmosphere includes tellurium vapor.
Claim 7
Dependent Claim
40 words
The method of claim 6 wherein, prior to said annealing step, the method includes the step of placing said body on the polished surface of a zinc telluride membeR, the implanted surface of said body being adjacent said polished surface.
Claim 8
Dependent Claim
158 words
A p-n junction device of the type selected from the group consisting of light detectors, small signal rectifiers, solar cells and light emitters, said device comprising a body of normally p-type crystalline zinc telluride, one surface of which has been converted to n-type material by implanting therein ions of a dopant element selected from Group VII A of the Periodic Chart, and annealing said body at a temperature between 500* C and 575* C for a period of time between 1 and 5 1/2 hours, and first and second electrodes respectively disposed on said one surface and on a portion of said body that is remote from said one surface, said annealing reducing radiation damage caused by said ion implantation and causing said implanted ions to enter into electrically active sites in the zinc telluride lattice, said period of time during which said body is annealed being insufficient to deteriorate the electrical properties of the type converted surface.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-05-07 | 1976-11-06 | 1977-05-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-05-07 | 1980-11-06 | 1981-05-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-05-07 | 1984-11-06 | 1985-05-08 | $7700.00 | Window Closed / Lapsed |