Patent US3730766A successfully refreshed from Google Patents.
US3730766A
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US
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Semiconductor device and a method of making the same
Assignee: Hitachi Ltd
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Filing: 1969-10-08
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Granted: 1973-05-01
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Expires: 1989-10-08
Abstract
Abstract A METHOD OF STABILIZING THE SURFACE CHARACTERISTICS OF A SILICON DEVICE WHEREIN A FIRST INSULATING LAYER OF SILICON DIOXIDE IS FORMED UPON THE SILICON SUBSTRATE, THEN A SECOND INSULATING LAYER OF ALUMINA IS DEPOSITED UPON THE FIRST INSULATING LAYER AND THEREAFTER A THIRD INSULATING LAYER OF SILICON DIOXIDE IS DEPOSITED UPON THE SECOND INSULATING LAYER. THE SURFACE CHARGE INDUCED BY COATING SAID FIRST AND SECOND INSULATING LAYERS UPON THE SURFACE OF THE SUBSTRATE IS CONTROLLED IN ACCORDANCE WITH THE THICKNESS OF THE THIRD INSULATING LAYER.
Inventors
- 👤 S Nishimatsu
- 👤 T Tokuyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10D; H10D99/00; H10W; H10W74/00; H10W74/10; H10W74/131; H10W74/40; H10W74/43; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P14/6928; H10P14/6929; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S438/00; Y10S438/91; Y10T; Y10T428/00; Y10T428/24; Y10T428/24479
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-30 | 1976-10-30 | 1977-05-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-30 | 1980-10-30 | 1981-05-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-30 | 1984-10-30 | 1985-05-01 | $7700.00 | Window Closed / Lapsed |