Patent US3729662A successfully refreshed from Google Patents.
US3729662A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor resistor
Assignee: International Business Machines Corp
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Filing: 1971-03-26
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Granted: 1973-04-24
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Expires: 1991-03-26
Abstract
Abstract A diffused resistor structure and method for fabrication which produces the resistor electrical contacts below the surface of the semiconductor device. The resistor structure includes a resistor region of a first conductivity type surrounded at the surface of the region by a region of a second conductivity. At least two spaced semiconductor electrical contacts of a first conductivity are made to the resistor region. The contacts are below the surface of the resistor structure. Electrical contacts are provided on the surface of the structure spaced from the resistor region and electrically connected to the two spaced semiconductor contacts below the surface of the resistor structure.
Inventors
- 👤 J Langdon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 03:23
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/43; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
95 words
A semiconductor resistor structure comprising: a resistor region of a first conductivity type surrounded at the surface of said structure with a region of a lower value of conductivity than said resistor region; at least two spaced semiconductor electrical contacts of said first conductivity type to said resistor region; said contacts being below the surface of the said resistor region and having a higher value of conductivity than said resistor region; electrical contacts on the surface of said structure spaced from said resistor region and electrically connected to said at least two spaced semiconductor contacts.
Claim 2
Dependent Claim
95 words
A semiconductor resistor structure comprising: a resistor region of a first conductivity type surrounded at the surface of said structure with a region of a lower value of conductivity than said resistor region; at least two spaced semiconductor electrical contacts of said first conductivity type to said resistor region; said contacts being below the surface of the said resistor region and having a higher value of conductivity than said resistor region; electrical contacts on the surface of said structure spaced from said resistor region and electrically connected to said at least two spaced semiconductor contacts.
Claim 3
Dependent Claim
16 words
The semiconductor resistor structure of claim 1 wherein said electrical contacts on the surface are metallic.
Claim 4
Dependent Claim
15 words
The semiconductor resistor structure of claim 2 wherein said metallic electrical contacts are ohmic contacts.
Claim 5
Dependent Claim
24 words
The semiconductor resistor structure of claim 3 wherein the said ohmic contacts are to diffused regions interposed between said semiconductor and said metallic contacts.
Claim 6
Dependent Claim
32 words
The semiconductor resistor of claim 4 wherein said structure includes a substrate body and an epitaxial layer thereon, and said semiconductor electrical contacts are partially within said body and said epitaxial layer.
References Cited (Backward Citations)
US3569800A
Cited
US3629667A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-23 | 1976-10-23 | 1977-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-23 | 1980-10-23 | 1981-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-23 | 1984-10-23 | 1985-04-24 | $7700.00 | Window Closed / Lapsed |