Patent US3729348A successfully refreshed from Google Patents.
US3729348A
Expired / Lapsed
US
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Method for the solution growth of more perfect semiconductor crystals
Assignee: AT&T Inc
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Filing: 1970-09-29
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Granted: 1973-04-24
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Expires: 1990-09-29
Abstract
Abstract IF THE DEPOSITION OF SEMICONDUCTOR MATERIAL FROM SOLUTION ONTO AN IMPERFECT SEED IS HALTED FOR A SHORT TIME, MATERIAL DEPOSITED SUBSEQUENT TO THE HALT CONTAINS FEWER DISLOCATIONS THAN MATERIAL DEPOSITED PRIOR TO THE HALT. IN COMPOUND SEMICONDUCTORS, THIS PROCEDURE HAS BEEN APPLIED, FOR INSTANCE, TO THE EPITAXIAL GROWTH OF GALLIUM PHOSPHIDE (GAP) FROM GALLIUM SOLUTION ONTO A GAP CZOCHRALSKI PULLED SUBSTRATE.
Inventors
- 👤 R Saul
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:34
CPC Classifications
C; C30; C30B; C30B19/00; C30B19/10; Y; Y10; Y10S; Y10S148/00; Y10S148/097; Y10S148/107; Y10S148/108
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-23 | 1976-10-23 | 1977-04-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-23 | 1980-10-23 | 1981-04-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-23 | 1984-10-23 | 1985-04-24 | $7700.00 | Window Closed / Lapsed |