Method of making semiconductor devices mounted on a heat sink
Abstract
Abstract A REGION OF A SEMICONDUCTOR MATERIAL IS OF A CONDUCTIVITY TYPE OR TYPES REQUIRED BY THE SEMICONDUCTOR DEVICES BEING FORMED IS PROVIDED ON A LOW RESISTIVITY P TYPE SEMICONDUCTOR SUBSTRATE WITH A THIN BARRIER REGION OF HIGH RESISTIVITY SEMICONDUCTOR MATERIAL BEING BETWEEN THE SUBSTRATE AND THE SEMICONDUCTOR DEVICE REGION. A METAL HEAT SINK BODY IS PROVIDED ON THE SEMICONDUCTOR DEVICE REGION. THE SUBSTRATE IS THEN REMOVED BY ELECTROLYTICALLY ETCHING THE SUBSTRATE. THE BARRIER REGION IS REMOVED BY CHEMICALLY ETCHING TO EXPOSE A SURFACE OF THE SEMICONDUCTOR DEVICE REGION. CONTACT PADS ARE FORMED ON THE SURFACE OF THE SEMICONDUCTOR DEVICE REGION AND THE SEMICONDUCTOR DEVICE REGION-METAL BODY COMPOSITE IS DIVIDED INTO INDIVIDUAL SEMICONDUCTOR DEVICES EACH MOUNTED ON A HEAT SINK.
Inventors
- 👤 K Weller
- 👤 C Wen
Bibliographic Details
Claims Analysis
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