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US3727188A Expired / Lapsed US ⏱️ 0.0 years remaining

Fast selection unit for stores

Assignee: US Philips Corp
•
Filing: 1971-07-12
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Granted: 1973-04-10
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Expires: 1991-07-12
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Abstract

Abstract In a store information is written or read by means of short current pulses in selected conductors which are associated with given storage elements. Used as switching elements are transistors which in the conducting state, however, can store a large charge in the base-emitter capacitance. For quick depletion of this charge a second transistor is brought to the conducting state for a short period at the end of the current pulse.

Inventors

  • 👤 J Horsten

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 02:02
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/56; H03K17/60; G; G11; G11C; G11C11/00; G11C11/02; G11C11/06; G11C11/06007; H03K17/04; H03K17/041; H03K17/0412; H03K17/04126; H03K17/62; H03K17/6221

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 203 words
A fast selection unit for selecting at least one storage element of a store in which information can be electrically stored in a binary form, comprising at least one selection transistor having a base electrode to which a selection pulse can be applied, and an emitter electrode through which a current pulse generated by a generator can be conducted, the emitter electrode being connected to the generator during a stand-by period by means of switching means disposed between said generator and said emitter electrode, the coexistence of this connection and the selection pulse bringing the selection transistor to the conducting state so tHat said storage element is selected, at least one second transistor also being connected to the base electrode of the selection transistor, and a base electrode of the second transistor being connected to an output of a differentiating network, said differentiating network having an input to which the selection pulse is applied, said differentiating network creating a differentiated selection pulse at its output causing said second transistor to conduct temporarily at the end of the selection period, so that the charge present in the base of the selection transistor is depleted via a low resistivity emitter-collector path of the second transistor.
Claim 2
Dependent Claim 203 words
A fast selection unit for selecting at least one storage element of a store in which information can be electrically stored in a binary form, comprising at least one selection transistor having a base electrode to which a selection pulse can be applied, and an emitter electrode through which a current pulse generated by a generator can be conducted, the emitter electrode being connected to the generator during a stand-by period by means of switching means disposed between said generator and said emitter electrode, the coexistence of this connection and the selection pulse bringing the selection transistor to the conducting state so tHat said storage element is selected, at least one second transistor also being connected to the base electrode of the selection transistor, and a base electrode of the second transistor being connected to an output of a differentiating network, said differentiating network having an input to which the selection pulse is applied, said differentiating network creating a differentiated selection pulse at its output causing said second transistor to conduct temporarily at the end of the selection period, so that the charge present in the base of the selection transistor is depleted via a low resistivity emitter-collector path of the second transistor.
Claim 3
Dependent Claim 26 words
A fast selection unit as claimed in claim 1, wherein the generator is a current source, the stand-by period being terminated simultaneously with the selection pulse.
Claim 4
Dependent Claim 26 words
The fast selection unit of claim 1, wherein said store has at least one selection matrix for the simultaneous selection of a series of storage elements.
Claim 5
Dependent Claim 22 words
The fast selection unit of claim 1, wherein said differentiating network comprises a diode connected across a resistor of said differentiating network.
Claim 6
Dependent Claim 131 words
A fast selection unit for selecting at least one storage element of a store in which information can be electrically stored in binary form, comprising: at least one selection transistor having base, collector, and emitter electrodes; a second transistor having base, collector, and emitter electrodes, the base electrode of said selection transistor being connected to the collector electrode of said second transistor; a voltage source, said collector of said selection transistor being connected to said voltage source through a resistor; a differentiating network having an output for transmitting a selection pulse to the base electrode of said second transistor; a source of supply voltage; a third transistor having an emitter-collector path, said emitter-collector path forming a conducting path between said source of supply voltage and the collector of said second transistor.
Claim 7
Dependent Claim 131 words
A fast selection unit for selecting at least one storage element of a store in which information can be electrically stored in binary form, comprising: at least one selection transistor having base, collector, and emitter electrodes; a second transistor having base, collector, and emitter electrodes, the base electrode of said selection transistor being connected to the collector electrode of said second transistor; a voltage source, said collector of said selection transistor being connected to said voltage source through a resistor; a differentiating network having an output for transmitting a selection pulse to the base electrode of said second transistor; a source of supply voltage; a third transistor having an emitter-collector path, said emitter-collector path forming a conducting path between said source of supply voltage and the collector of said second transistor.
Claim 8
Dependent Claim 13 words
The selection unit of claim 5, wherein said conducting path contains a resistor.
Claim 9
Dependent Claim 55 words
The selection unit of claim 6, wherein said conducting path resistor is located between said second and third transistors, a capacitor being connected across said conducting path resistor, a delay means connected before said second transistor and said differentiating network, and a source of negative voltage connected to the emitter electrode of said second transistor.

References Cited (Backward Citations)

US3365587A Cited
US3445831A Cited
US3451048A Cited
US3470391A Cited
US3609405A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-04-09 1976-10-09 1977-04-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-04-09 1980-10-09 1981-04-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-04-09 1984-10-09 1985-04-10 $7700.00 Window Closed / Lapsed

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