Patent US3726733A successfully refreshed from Google Patents.
US3726733A
Expired / Lapsed
US
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Method of manufacturing thin-film integrated circuits
Assignee: Fujitsu Ltd
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Filing: 1971-02-03
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Granted: 1973-04-10
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Expires: 1991-02-03
Abstract
Abstract A METHOD OF MAKING A THIN-FILM INTEGRATED CIRCUIT CONTAINING A TANTALUM NITRIDE RESISTOR AND A TANTALUM CAPACITOR IS DISCLOSED. A THIN TANTALUM LAYER IS PROVIDED ON THE UPPER SURFACE OF THE TANTALUM NITRIDE. THIS DOUBLE LAYER IS ANODICALLY OXIDIZED IN ORDER TO ADJUST THE RESISTANCE VALUE OF THE RESISTOR. A TANTALUM PENTOXIDE LAYER CONVERTED FROM THE TANTALUM LAYER SUBSTANTIALLY PROTECTS THE TAN- TALUM NITRIDE FROM THE ETCHING LIQUID IN THE PATTERNING OF A TANTALUM LAYER FOR THE FORMATION OF THE TANTALUM CAPACITOR DEPOSITED ON THE ENTIRE SURFACE OF THE SUBSTRATE SUBSEQUENT TO THE FORMATION OF THE RESISTOR.
Inventors
- 👤 M Nakamura
- 👤 S Akiba
- 👤 J Yamazaki
- 👤 T Kamo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:37
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-09 | 1976-10-09 | 1977-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-09 | 1980-10-09 | 1981-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-09 | 1984-10-09 | 1985-04-10 | $7700.00 | Window Closed / Lapsed |