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Patent US3726719A successfully refreshed from Google Patents.
US3726719A
Expired / Lapsed
US
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Ion implanted semiconductor structures
Assignee: International Business Machines Corp
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Filing: 1971-10-06
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Granted: 1973-04-10
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Expires: 1991-10-06
Abstract
Abstract DISCLOSED IS AMETHOD FOR IMPLANTING SILICON IONS INTO MONOCRYSTALLINE SILICON SEMICONDUCTOR SUBSTRATES AND FORMING AMORPHOUS INSULATING LAYERS AND BOUNDARIES WITHIN SAID SUBSTRATE THEREBY FORMING ISOLATION STRUCTURES, DEVICES AND OTHER DISCRETE OR INTERCONNECTED SEMICONDUCTOR COMPONENTS. THIS IS ACCOMPLISHED BY BOMBARDING THE SILICON BODY WITH CONTROLLED AND DIRECTED SILICON IONS WITH AN ENERGY LEVEL SUFFICIENT TO RESULT IN ION PENETRATION TO THE DESIRED SUBSURFACE DEPTH.
Inventors
- 👤 K Brack
- 👤 E Gorey
- 👤 G Schwuttke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 17:08
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/222; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W; H10W10/00; H10W10/01; H10W10/061; H10W10/10; H10W10/181; H10P90/1908; H10W10/011; H10W10/012; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/085
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-04-09 | 1976-10-09 | 1977-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-04-09 | 1980-10-09 | 1981-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-04-09 | 1984-10-09 | 1985-04-10 | $7700.00 | Window Closed / Lapsed |