Method for the production of masks in the manufacture of semiconductor components
Abstract
Abstract IN A PROCESS FOR THE PRODUCTION OF MASKS IN THE MANUFACTURE OF SEMICONDUCTOR COMPONENTS, ONTO A COATED OR UNCOATED SEMICONDUCTOR SUBSTRATE IS SPUTTERED A COMPOSITION CONTAINING A SILICON OXIDE OR NITRIDE COMPOUND AT A POWER DENSITY NO GREATER THAN ABOUT 0.2 WATT PER CM.2 UNTIL A COATING THICKNESS OF AT LEAST 0.1 UM. IS ATTAINED AND THEN AT A POWER DENSITY NO GREATER THAN ABOUT 0.4 WATT PER CM.2 UNTIL THE COATING HAS ATTAINED A THICKNESS OF 0.3 TO 2.0 UM., THEN THE POWER DENSITY IS INCREASED TO 3 TO 5 WATTS PER CM2 TO PARTIALLY DECOMPOSE THE PHOTORESIST MASK AND TEAR OPEN THE COATING SUPERIMPOSED THEREON; THIS IS FOLLOWED BY SOLVENT AND ULTRASONIC TREATMENTS TO REMOVE THE REMAINING PHOTORESIST AND SUPERIMPOSED COATING.
Inventors
- 👤 W Schmiedecke
Bibliographic Details
Claims Analysis
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-26 | 1976-09-25 | 1977-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-26 | 1980-09-25 | 1981-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-26 | 1984-09-25 | 1985-03-27 | $7700.00 | Window Closed / Lapsed |