Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
100 words
Solid state temperature sensing apparatus comprising first and second rectifying Schottky-barriers disposed in series-aiding polarity with a common portion therebetween providing an output terminal, the first and seconD Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area, such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, and, a temperature indicating means coupled to the output terminal and responsive to voltages thereupon.
Claim 2
Dependent Claim
100 words
Solid state temperature sensing apparatus comprising first and second rectifying Schottky-barriers disposed in series-aiding polarity with a common portion therebetween providing an output terminal, the first and seconD Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area, such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, and, a temperature indicating means coupled to the output terminal and responsive to voltages thereupon.
Claim 3
Dependent Claim
100 words
Solid state temperature sensing apparatus comprising first and second rectifying Schottky-barriers disposed in series-aiding polarity with a common portion therebetween providing an output terminal, the first and seconD Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area, such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, and, a temperature indicating means coupled to the output terminal and responsive to voltages thereupon.
Claim 4
Dependent Claim
100 words
Solid state temperature sensing apparatus comprising first and second rectifying Schottky-barriers disposed in series-aiding polarity with a common portion therebetween providing an output terminal, the first and seconD Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area, such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, and, a temperature indicating means coupled to the output terminal and responsive to voltages thereupon.
Claim 5
Dependent Claim
65 words
Apparatus as recited in claim 1 wherein the barrier height and barrier area of the first Schottky-barrier are related to the barrier height and barrier area of the second Schottky-barrier such that at a predetermined operating temperature and with a predetermined reverse current flowing through both Schottky-barriers the voltage subtended by the first Schottky-barrier is the same as the voltage subtended by the second Schottky-barrier.
Claim 6
Dependent Claim
52 words
Apparatus as recited in claim 1 wherein: the first Schottky-barrier includes a metallic silicide in rectifying barrier relationship with N-type silicon; the second Schottky-barrier includes the same type metallic silicide in rectifying barrier relationship with P-type silicon; and the common portion therebetween is a metal electrode in contact with both metallic silicides.
Claim 7
Dependent Claim
37 words
Apparatus as recited in claim 3 wherein: the N-type and P-type portions are included in a semiconductive wafer which further includes a heavily doped N -type portion contiguous with the N-type portion for facilitating ohmic contact thereto.
Claim 8
Dependent Claim
40 words
Apparatus as recited in claim 4 further including a metallic silicide contiguous with and making substantially ohmic contact to the N -type portion, this last-mentioned metallic silicide being of the same type as the metallic silicides forming the rectifying barriers.
Claim 9
Dependent Claim
148 words
A temperature regulating system, comprising a. solid state temperature sensing apparatus including first and second rectifying Schottky-barriers disposed in series adding polarity with a common portion therebetween providing an output terminal, the first and second Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, b. means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, c. said temperature sensing apparatus being closely thermally coupled to an object the temperature of which is to be regulated, d. and temperature modifying means for opposing changes in temperature of said object, coupled to the output terminal and controlled by the temperature-dependent voltage at the output terminal to regulate the temperature of said object.
Claim 10
Dependent Claim
148 words
A temperature regulating system, comprising a. solid state temperature sensing apparatus including first and second rectifying Schottky-barriers disposed in series adding polarity with a common portion therebetween providing an output terminal, the first and second Schottky-barriers being substantially dissimilar in both barrier height and effective barrier area such that with the same reverse current flowing through both Schottky-barriers the voltage at the output terminal varies with the operating temperature of the Schottky-barriers, b. means for applying a voltage over the series combination of Schottky-barriers for producing substantially equal reverse currents through said Schottky-barriers, c. said temperature sensing apparatus being closely thermally coupled to an object the temperature of which is to be regulated, d. and temperature modifying means for opposing changes in temperature of said object, coupled to the output terminal and controlled by the temperature-dependent voltage at the output terminal to regulate the temperature of said object.
Claim 11
Dependent Claim
37 words
The system of claim 6, wherein said temperature modifying means comprises an electric heater, coupled to said output terminal, whereby a decrease in temperature of said object produces an increase in heat generated by said electric heater.
Claim 12
Dependent Claim
66 words
A system as recited in claim 6 wherein the barrier height and barrier area of the first Schottky-barrier are related to the barrier height and barrier area of the Second Schottky-barrier such that at a predetermined operating temperature and with a predetermined reverse current flowing both through Schottky-barriers the voltage subtended by the first Schottky-barrier is the same as the voltage subtended by the second Schottky-barrier.
Claim 13
Dependent Claim
53 words
A system as recited in claim 6 wherein: the first Schottky-barrier includes a metallic silicide in rectifying barrier relationship with N-type silicon; the second Schottky-barrier includes the same type metallic silicide in rectifying barrier relationshiP with P-type silicon; and the common portion therebetween is a metal electrode in contact with both metallic silicides.
Claim 14
Dependent Claim
38 words
A system as recited in claim 9 wherein: the N-type and P-type portions are included in a semiconductive wafer which further includes a heavily doped N -type portion contiguous with the N-type portion for facilitating ohmic contact thereto.