Patent US3716424A successfully refreshed from Google Patents.
US3716424A
Expired / Lapsed
US
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Method of preparation of lead sulfide pn junction diodes
Assignee: United States Department of the Navy
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Filing: 1970-04-02
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Granted: 1973-02-13
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Expires: 1990-04-02
Abstract
Abstract Flat, uniform planar diodes of PbS are prepared by either (1) epitaxially growing an n-type layer onto a p-type layer by depositing one layer epitaxially onto the other in a vacuum of at least 5 X 10 5 Torr wherein the substrate is at a temperature between 200-350* C and the material to be deposited is at a temperature not lower than its sublimation point or (2) epitaxially growing a p-type layer on an n-type layer using the procedure described in (1) with the addition of vapors of a doping agent such as S, Se or Te, in the system. This method may also be applied to the closely related compounds PbxSn1 xSe and PbxSn1 xTe where x varies from 0 to 1 inclusive, hereinafter referred to as the lead-tin salt alloys.
Inventors
- 👤 R Schoolar
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:37
CPC Classifications
H; H10; H10P; H10P10/00; H10P95/00; H10P95/80; Y; Y10; Y10S; Y10S148/00; Y10S148/063; Y10S148/169; Y10S257/00; Y10S257/912
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
139 words
A method of epitaxially growing an n-type layer of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 inclusive onto a p-type substrate of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 inclusive comprising: depositing said n-type layer at a pressure no greater than 5 X 10 5 Torr from a source of the material to be deposited said source material being the chemically reacted materials having about the same composition as that of the films to be deposited but being slightly rich in (PbxSn1 x), said source material being at a temperature at least equal to the sublimation temperature of that material onto a p-type substrate which is at a temperature between 200-350*C.
Claim 2
Independent Claim
139 words
A method of epitaxially growing an n-type layer of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 inclusive onto a p-type substrate of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 inclusive comprising: depositing said n-type layer at a pressure no greater than 5 X 10 5 Torr from a source of the material to be deposited said source material being the chemically reacted materials having about the same composition as that of the films to be deposited but being slightly rich in (PbxSn1 x), said source material being at a temperature at least equal to the sublimation temperature of that material onto a p-type substrate which is at a temperature between 200-350*C.
Claim 3
Independent Claim
164 words
A method of epitaxially growing a p-type layer of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 XTe wherein varies from 0 to 1 inclusive onto an n-type substrate of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 comprising: depositing said p-type layer at a pressure no greater than 5 X 10 5 Torr from a source of the material to be deposited, said source material being the chemically reacted materials having about the same composition as that of the films to be deposited but being slightly rich in (PbxSn1 x), said source material being at a temperature at least equal to the sublimation temperature of that material, onto an n-type substrate at a temperature between 200-350*C in the present of vapors of a substance capable of altering the stoichiometry of said film, said vapors being selected from the group consisting of S, Te and Se.
Claim 4
Independent Claim
164 words
A method of epitaxially growing a p-type layer of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 XTe wherein varies from 0 to 1 inclusive onto an n-type substrate of a material selected from the group consisting of PbS, PbxSn1 xSe and PbxSn1 xTe wherein x varies from 0 to 1 comprising: depositing said p-type layer at a pressure no greater than 5 X 10 5 Torr from a source of the material to be deposited, said source material being the chemically reacted materials having about the same composition as that of the films to be deposited but being slightly rich in (PbxSn1 x), said source material being at a temperature at least equal to the sublimation temperature of that material, onto an n-type substrate at a temperature between 200-350*C in the present of vapors of a substance capable of altering the stoichiometry of said film, said vapors being selected from the group consisting of S, Te and Se.
Claim 5
Dependent Claim
17 words
A method according to claim 1 wherein the substrate and the material to be deposited is PbS.
Claim 6
Dependent Claim
31 words
A method according to claim 3 wherein the temperature of the substrate is about 270*C, the rate of deposition is about 170 A/min. and the pressure is about 10 5 Torr.
Claim 7
Dependent Claim
17 words
A method according to claim 2 wherein the substrate and the material to be deposited is PbS.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-02-13 | 1976-08-14 | 1977-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-02-13 | 1980-08-14 | 1981-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-02-13 | 1984-08-14 | 1985-02-13 | $7700.00 | Window Closed / Lapsed |