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US3716404A
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Process for doping with impurities a gas-phase-grown layer of iii-v compound semiconductor
Assignee: Hitachi Ltd
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Filing: 1970-09-11
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Granted: 1973-02-13
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Expires: 1990-09-11
Abstract
Abstract A process for doping a semiconductor material with an impurity source of SnI4, SnBr4, GeI4, GeBr4, combinations thereof or a mixture of S and S2Cl2 by vaporizing the impurity source at a temperature of from 0* to 20*C. and then transferring the vapor with a carrier gas into contact with a semiconductor layer composed of a III-V compound in the course of its gas-phase growth. In this manner, it is possible to regulate the concentration of doping impurity, such as Sn, Ge or S, over a full range of lower concentrations (such as 1015-1018 cm 3) with semiconductor materials such as GaAs, GaP, GaPAs and InAs.
Inventors
- 👤 M Hirao
- 👤 Y Takeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 13:38
CPC Classifications
H; H10; H10P; H10P95/00; H10P14/00; H10P14/20; H10P14/22; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3442; Y; Y10; Y10S; Y10S148/00; Y10S148/002; Y10S148/065; Y10S438/00; Y10S438/914; Y10S438/925
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
125 words
In a process for doping a vapor-phase epitaxial layer of a III-V compound semiconductor with at least one element selected from the group consisting of Sn, Ge and S during the course of epitaxial growth on a substrate of said semiconductor, by introducing a carrier gas containing a vapor of the same semiconductor as the substrate onto said substrate and by growing a layer of said semiconductor on said substrate in contact with said vapor phase, the improvement which comprises evaporating an impurity source of dopant selected from the group consisting of solid solutions obtained from combinations of SnI4, SnBr4, GeI4, and GeBr4, and mixtures of S and S2Cl2 and introducing the gas released from said impurity source onto said substrate with said carrier gas.
Claim 2
Dependent Claim
125 words
In a process for doping a vapor-phase epitaxial layer of a III-V compound semiconductor with at least one element selected from the group consisting of Sn, Ge and S during the course of epitaxial growth on a substrate of said semiconductor, by introducing a carrier gas containing a vapor of the same semiconductor as the substrate onto said substrate and by growing a layer of said semiconductor on said substrate in contact with said vapor phase, the improvement which comprises evaporating an impurity source of dopant selected from the group consisting of solid solutions obtained from combinations of SnI4, SnBr4, GeI4, and GeBr4, and mixtures of S and S2Cl2 and introducing the gas released from said impurity source onto said substrate with said carrier gas.
Claim 3
Dependent Claim
34 words
The process of claim 1, wherein the impurity source is selected from the group consisting of solid solutions of SnI4 and SnBr4, solid solutions of GeI4 and GeBr4 and mixtures of S and S2Cl2.
Claim 4
Dependent Claim
17 words
The process of claim 1, wherein the impurity source is a solid solution of SnI4 and SnBr4.
Claim 5
Dependent Claim
17 words
The process of claim 1, wherein the impurity source is a solid solution of GeI4 and GeBr4.
Claim 6
Dependent Claim
16 words
The process of claim 1, wherein the impurity source is a mixture of S and S2Cl2.
Claim 7
Dependent Claim
19 words
The process of claim 1, wherein the impurity source is evaporated at a temperature of from 0* to 20*C.
Claim 8
Dependent Claim
19 words
The process of claim 5, wherein the impurity source is evaporated at a temperature of from 0* to 20*C.
Claim 9
Dependent Claim
32 words
The process of claim 1, further comprising the step of controlling the amount of impurity carried from the impurity source onto said substrate by regulating the flow rate of the carrier gas.
Claim 10
Dependent Claim
32 words
The process of claim 5, further comprising the step of controlling the amount of impurity carried from the impurity source onto said substrate by regulating the flow rate of the carrier gas.
Claim 11
Dependent Claim
19 words
The process of claim 5, wherein the ratio of S and S2Cl2 is between 10:1 and 500:1 by weight.
Claim 12
Dependent Claim
32 words
The process of claim 10, further comprising the step of controlling the amount of impurity carried from the impurity source onto said substrate by regulating the flow rate of the carrier gas.
Claim 13
Dependent Claim
21 words
The process of claim 1, wherein said compound semiconductor is selected from the group consisting of GaAs, GaP, GaPAs and InAs.
Claim 14
Dependent Claim
22 words
The process of claim 1, wherein the resultant concentration of impurity dopant in the semiconductor is about 1015 to 1018 cm 3.
Claim 15
Dependent Claim
11 words
The process of claim 1, wherein the carrier gas is hydrogen.
Claim 16
Dependent Claim
30 words
The process of claim 2, wherein the concentration of impurity dopant in the semiconductor is varied by varying the molar ratios of the constituents in the solid solutions and mixtures.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-02-13 | 1976-08-14 | 1977-02-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-02-13 | 1980-08-14 | 1981-02-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-02-13 | 1984-08-14 | 1985-02-13 | $7700.00 | Window Closed / Lapsed |