Patent US3715634A successfully refreshed from Google Patents.
US3715634A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Switchable current controlling device with inactive material dispersed in the active semiconductor material
Assignee: Energy Conversion Devices Inc
•
Filing: 1968-07-05
•
Granted: 1973-02-06
•
Expires: 1988-07-05
Abstract
Abstract A switchable controlling device for an electrical circuit including a semiconductor element and electrodes in low electrical resistance contact therewith, wherein said semiconductor element has a high electrical resistance to provide a blocking condition for substantially blocking current therethrough, wherein the high electrical resistance is substantially instantaneously decreased to a low electrical resistance in response to a voltage above a threshold voltage value, wherein the semiconductor element in the low electrical resistance conducting condition has a voltage drop which is a fraction of the voltage drop in the high electrical resistance blocking condition near the threshold voltage value, and wherein the semiconductor element consists essentially of an active switchable semiconductor material and a relatively inactive material dispersed throughout the active material to add mechanical strength to the semiconductor element and to inhibit migration or diffusion in the active material.
Inventors
- 👤 S Ovshinsky
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:07
CPC Classifications
H; H10; H10N; H10N70/00; H10N70/011; H10N70/021; H10N70/026; H10N70/20; H10N70/231; H10N70/801; H10N70/821; H10N70/826; H10N70/828; G; G11; G11C; G11C13/00; G11C13/0002; G11C13/0004
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
144 words
A switchable current controlling device for an electrical circuit including a semiconductor element and electrodes in low electrical resistance contact therewith, wherein said semiconductor element has a relatively high electrical resistance to provide a blocking condition for substantially blocking current therethrough, and has means for substantially instantaneously decreasing said relatively high electrical resistance in response to a voltage above a threshold voltage value in at least one path between the electrodes to a relatively low electrical resistance which is orders of magnitude lower than the relatively high electrical resistance to provide a conducting condition for substantially conducting current therethrough, the improvement wherein said semiconductor element consists essentially of a solid substantially disordered and generally amorphous active switchable semiconductor material and particles of a relatively inactive material which does not substantially chemically react with the active material embedded in and dispersed throughout the active material.
Claim 2
Dependent Claim
144 words
A switchable current controlling device for an electrical circuit including a semiconductor element and electrodes in low electrical resistance contact therewith, wherein said semiconductor element has a relatively high electrical resistance to provide a blocking condition for substantially blocking current therethrough, and has means for substantially instantaneously decreasing said relatively high electrical resistance in response to a voltage above a threshold voltage value in at least one path between the electrodes to a relatively low electrical resistance which is orders of magnitude lower than the relatively high electrical resistance to provide a conducting condition for substantially conducting current therethrough, the improvement wherein said semiconductor element consists essentially of a solid substantially disordered and generally amorphous active switchable semiconductor material and particles of a relatively inactive material which does not substantially chemically react with the active material embedded in and dispersed throughout the active material.
Claim 3
Dependent Claim
36 words
A current controlling device as defined in claim 1 wherein said active switchable semiconductor material has means for providing a substantially more ordered crystalline line condition in said at least one path in its conducting condition.
Claim 4
Dependent Claim
87 words
A current controlling device as defined in claim 2 wherein said device is a memory type device and said semiconductor element has means for maintaining said at least one path through said semiconductor element its relatively low electrical resistance conducting coNdition even in the absence of current, and for realtering said relatively low electrical resistance conducting condition of said at least one path through the semiconductor element to said relatively high electrical resistance blocking condition in response to a current pulse of at least a threshold value.
Claim 5
Dependent Claim
87 words
A current controlling device as defined in claim 1 wherein said device is a memory type device and said semiconductor element has means for maintaining said at least one path through said semiconductor element in its relatively low electrical resistance conducting condition even in the absence of current, and for realtering said relatively low electrical resistance conducting condition of said at least one path through the semiconductor element to said high electrical resistance blocking condition in response to a current pulse of at least a threshold value.
Claim 6
Dependent Claim
69 words
A current controlling device as defined in claim 1 wherein said device is a non-memory type device and said semiconductor element has means for immediately returning said relatively low electrical resistance of said at least one path through said semiconductor element in the conducting condition to the relatively high electrical resistance in response to a decease in current below a minimum current holding value which re-establishes the blocking condition.
Claim 7
Dependent Claim
30 words
A current controlling device as defined in claim 1 wherein said particles of relatively inactive material which are embedded in and dispersed throughout said active material are substantially a dielectric.
Claim 8
Dependent Claim
18 words
A current controlling device as defined in claim 6 wherein said particles of inactive material comprise aluminum oxide.
Claim 9
Dependent Claim
18 words
A current controlling device as defined in claim 1 wherein said semiconductor element comprises a deposited thin film.
Claim 10
Dependent Claim
33 words
A current controlling device as defined in claim 8 wherein said deposited thin film of said semiconductor element is formed by co-evaporation of said active switchable semiconductor material and said relatively inactive material.
Claim 11
Dependent Claim
33 words
A current controlling device as defined in claim 8 wherein said deposited thin film of said semiconductor element is formed by co-sputtering of said active switchable semiconductor material and said relatively inactive material.
References Cited (Backward Citations)
US2589157A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-02-06 | 1976-08-07 | 1977-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-02-06 | 1980-08-07 | 1981-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-02-06 | 1984-08-07 | 1985-02-06 | $7700.00 | Window Closed / Lapsed |