Patent US3715631A successfully refreshed from Google Patents.
US3715631A
Expired / Lapsed
US
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Radio-frequency line
Assignee: Licentia Patent Verwaltungs GmbH
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Filing: 1970-05-01
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Granted: 1973-02-06
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Expires: 1990-05-01
Abstract
Abstract A radio-frequency line suitable for use as an electrical supply lead to semiconductor components, comprising a semiconductor body containing at least one semiconductor component and a strip line comprising a supply lead and a sink which is provided on one surface of the semiconductor body, a dielectric layer being provided between the supply lead and the sink.
Inventors
- 👤 H Beneking
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:01
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
177 words
A radio-frequency line suitable for use as an electrical supply lead to semiconductor components, comprising a semiconductor body, at least one semiconductor component in said semiconductor body, said semiconductor component including at least two active semiconductor regions, with each of said regions extending to one surface of said semiconductor body and being provided, at said surface, with a respective contact, at least one strip line comprising a supply lead and a sink provided on said one surface of said semiconductor body, a dielectric layer between the supply lead and sink, said supply lead, sink and dielectric layer being formed as layers on said one surface, with said supply lead and said sink each being electrically connected to a respective contact and superimposed with respect to one another to form a high frequency line with a given characteristic impedance, and separate external connection means formed as part of each of said supply lead and said sink, each said connection means having an exposed surface for electrically connecting said supply lead and said sink to an external electrical circuit.
Claim 2
Dependent Claim
177 words
A radio-frequency line suitable for use as an electrical supply lead to semiconductor components, comprising a semiconductor body, at least one semiconductor component in said semiconductor body, said semiconductor component including at least two active semiconductor regions, with each of said regions extending to one surface of said semiconductor body and being provided, at said surface, with a respective contact, at least one strip line comprising a supply lead and a sink provided on said one surface of said semiconductor body, a dielectric layer between the supply lead and sink, said supply lead, sink and dielectric layer being formed as layers on said one surface, with said supply lead and said sink each being electrically connected to a respective contact and superimposed with respect to one another to form a high frequency line with a given characteristic impedance, and separate external connection means formed as part of each of said supply lead and said sink, each said connection means having an exposed surface for electrically connecting said supply lead and said sink to an external electrical circuit.
Claim 3
Dependent Claim
99 words
A radio-frequency line as claimed in claim 1, including two strip lines and in which conducting paths are connected to said contacts and form supply leads for said strip lines, and in which said conducting paths and said one surface of the semiconductor body are covered by said dielectric layer which forms an insulating layer and in which the dieleCtric layer is at least partially covered by a metal layer which serves as said sink, an aperture being provided in the dielectric layer to allow said sink to be connected to one of said contacts of said semiconductor components.
Claim 4
Dependent Claim
77 words
A radio-frequency line as claimed in claim 2, in which a further insulating layer is provided between said one surface of the semiconductor body and said conducting paths to insulate said paths from said body, said dielectric layer covering said conducting paths and said further insulating layer and apertures being provided both in the dielectric layer and said further insulating layer to allow said sink to be connected to one of the contacts of said semiconductor components.
Claim 5
Dependent Claim
24 words
A radio-frequency line as claimed in claim 2, in which the width of said conducting paths corresponds to the thickness of the dielectric layer.
Claim 6
Dependent Claim
29 words
A radio-frequency line as claimed in claim 4, in which the conducting paths are about 3 Mu m wide and the dielectric layer is about 3 Mu m thick.
Claim 7
Dependent Claim
18 words
A radio-frequency line as claimed in claim 1, in which the semiconductor body consists of silicon or germanium.
Claim 8
Dependent Claim
18 words
A radio-frequency line as claimed in claim 1, in which the semiconductor body consists of semi-insulating gallium arsenide.
Claim 9
Dependent Claim
20 words
A radio-frequency line as claimed in claim 1, in which the insulating layers consist of silicon dioxide or silicon nitride.
Claim 10
Dependent Claim
22 words
A radio-frequency as claimed in claim 1, in which the sink is structured and divided to form a plurality of independent lines.
Claim 11
Dependent Claim
18 words
A radio-frequency line as claimed in claim 1, in which the supply lead and sink consist of gold.
Claim 12
Dependent Claim
18 words
A radio-frequency line as claimed in claim 1, in which the supply lead and sink consist of copper.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-02-06 | 1976-08-07 | 1977-02-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-02-06 | 1980-08-07 | 1981-02-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-02-06 | 1984-08-07 | 1985-02-06 | $7700.00 | Window Closed / Lapsed |