Patent US3714604A successfully refreshed from Google Patents.
US3714604A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self excited electron phonon resonator
Assignee: Individual
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Filing: 1970-07-13
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Granted: 1973-01-30
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Expires: 1990-07-13
Abstract
Abstract A method of obtaining an unlimited, in linear range, resonance of a piezoelectric surface wave by providing a piezoelectric semiconductor crystal having surfaces fulfilling Sommerfield boundary condition requirements, irradiating said crystal to establish therein a thin, near surface semiconducting layer to thereby generate surface waves in said layer, and amplifying said waves by applying a high voltage direct current to said layer; in addition, high frequency signals may be applied to said layer.
Inventors
- 👤 S Kaliski
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 12:24
CPC Classifications
H; H03; H03H; H03H9/00; H03H9/25; H03B; H03B9/00; H03B9/12; H03F; H03F13/00
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
111 words
The method of obtaining a substantially unlimited, in linear range, resonance of a piezoelectric surface wave in a piezoelectric semiconductor crystal, comprising: a. providing a piezoelectric semiconductor crystal having surfaces which fulfill the requirements of the Sommerfield boundary conditions, b. establishing in said crystal a near surface semiconducting layer by irradiating a surface of said crystal, c. generating ultrasonic surface waves in said crystal in a surface adjacent said semi-conducting layer, d. and amplifying said surface waves in said layer by applying a high voltage direct current to said irradiated crystal surface, e. whereby to effect de-damping of the surface waves and resonance amplification thereof in a substantially unlimited linear range.
Claim 2
Independent Claim
111 words
The method of obtaining a substantially unlimited, in linear range, resonance of a piezoelectric surface wave in a piezoelectric semiconductor crystal, comprising: a. providing a piezoelectric semiconductor crystal having surfaces which fulfill the requirements of the Sommerfield boundary conditions, b. establishing in said crystal a near surface semiconducting layer by irradiating a surface of said crystal, c. generating ultrasonic surface waves in said crystal in a surface adjacent said semi-conducting layer, d. and amplifying said surface waves in said layer by applying a high voltage direct current to said irradiated crystal surface, e. whereby to effect de-damping of the surface waves and resonance amplification thereof in a substantially unlimited linear range.
Claim 3
Dependent Claim
26 words
The method of claim 1, said crystal being cadmium sulphide and said irradiation being by light of a wave length in the order of 520 nanometers.
Claim 4
Dependent Claim
17 words
The method of claim 1, said crystal being cadmium selenide and said irradiation being by visible light.
Claim 5
Dependent Claim
21 words
The method of claim 1, said surface waves being generated by the application of signals thereto from a high frequency generator.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-30 | 1976-07-31 | 1977-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-30 | 1980-07-31 | 1981-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-30 | 1984-07-31 | 1985-01-30 | $7700.00 | Window Closed / Lapsed |