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Patent US3714013A successfully refreshed from Google Patents.
US3714013A
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US
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Refractory metal refractory metal nitride resistor films by cathode sputtering
Assignee: General Electric Co
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Filing: 1971-10-29
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Granted: 1973-01-30
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Expires: 1991-10-29
Abstract
Abstract TIONS BETWEEN APPROXIMATELY 40 AND 60% BY VOLUME OF THE RESISTOR FILM. LOW TEMPERATURE COEFFICIENT OF RESISTANCE, HIGH RESISTIVITY FILMS OF A REFRACTORY METAL/REFRACTORY METAL NITRIDE ARE FORMED BY SPUTTERING A TUNGSTEN OR MOLYBDENUM CATHODE IN A CHAMBER CONTAINING A MIXTURE OF AN INERT GAS AND NITROGEN WHEREIN NITROGEN FORMS BETWEEN 0.3 AND 3.0% OF THE SPUTTERING CHAMBER PRESSURE. THE DEPOSITED FILMS CHARACTERISTICALLY ARE A MIXTURE OF THE SPUTTERED METAL AND AT LEAST 5% BY VOLUME OF THE METAL NITRIDE WITH FILMS HAVING ESPECIALLY SUPERIOR ELECTRICAL CHARACTERISTICS CONTAINING THE METAL NITRIDE IN CONCENTRA-
Inventors
- 👤 J Rairden
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:24
CPC Classifications
C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-01-30 | 1976-07-31 | 1977-01-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-01-30 | 1980-07-31 | 1981-01-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-01-30 | 1984-07-31 | 1985-01-30 | $7700.00 | Window Closed / Lapsed |