Method of and apparatus for growing crystals from a solution

Claim 2

In a method of growing a crystal layer on a substrate from a liquid body rich in the constituents of the layer, which method includes at least a step of contacting the substrate with the liquid, the improvement comprising: configurating the liquid body in a forced vortex to effect the contacting where the distance between the substrate and the free surface of said forced vortex is such that the Rayleigh Number is less than about 1700.

Claim 3

In a method of growing a crystal layer on a selected portion of a substrate from a liquid body rich in the constituents of the layer the improvement comprising: configurating the liquid body in a forced vortex; and contacting the selected substrate portion with said forced vortex, the distance between the substrate portion and the free surface of said forced vortex during said contacting being such that the Rayleigh Number is less than about 1700.

Claim 4

In a method of growing a crystal layer on a selected portion of a substrate from a liquid body rich in the constituents of the layer the improvement comprising: configurating the liquid body in a forced vortex; and contacting the selected substrate portion with said forced vortex, the distance between the substrate portion and the free surface of said forced vortex during said contacting being such that the Rayleigh Number is less than about 1700.

Claim 5

The method of claim 2 which includes the further step of: positioning the substrate in a container and wherein said configurating step includes, placing the liquid body in said container, and rotating the container.

Claim 6

The method of claim 3 wherein during said contacting step the rotational velocity of said container during said contact is a velocity at which the distance between the selected substrate portion and the free surface of said forced vortex is such that the Rayleigh Number within said distance is less than about 1700.

Claim 7

The method of claim 4 wherein said contacting step is effected as a consequence of the effectuation of said configurating step.

Claim 8

In a method of growing a crystal layer on at least a portion of a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: imposing on the solution a forced vortex configuration which contacts the selected substrate surface portion to effect step (ii), the distance between the portion of the selected surface and the free surface of said forced vortex during step (ii) being such that the Rayleigh Number is less than about 1700.

Claim 9

In a method of growing a crystal layer on at least a portion of a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: imposing on the solution a forced vortex configuration which contacts the selected substrate surface portion to effect step (ii), the distance between the portion of the selected surface and the free surface of said forced vortex during step (ii) being such that the Rayleigh Number is less than about 1700.

Claim 10

The method of claim 6 wherein said forced vortex is imposed on the solution by rotating the container.

Claim 11

The method of claim 7 wherein the rotational velocity of the container during said contact is a velocity at which the distance between the selected substrate surface portion and the free surface of said forced solution vortex, measured generally perpendicular to said selected substrate surface is such that the Rayleigh Number with said distance is less than about 1700.

Claim 12

In a method of growing a crystal layer on a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: generating a forced vortex of the solution, which solution vortex covers the selected substrate surface to effect step (ii), the distance between the selected substrate surface and the free surface of said forced vortex during step (ii) being such that the Rayleigh Number is less than about 1700.

Claim 13

In a method of growing a crystal layer on a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: generating a forced vortex of the solution, which solution vortex covers the selected substrate surface to effect step (ii), the distance between the selected substrate surface and the free surface of said forced vortex during step (ii) being such that the Rayleigh Number is less than about 1700.

Claim 14

The method of claim 9 wherein said forced vortex is generated by rotating the container.

Claim 15

The method of claim 10 wherein the rotational velocity of the container during said contact is a velocity at which the distance between the selected substrate surface and the free surface of said forced solution vortex, measured generally perpendicular to said selected substrate surface is such that the Rayleigh Number within said distance is less than about 1700.

Claim 16

In a method of growing a crystal layer on a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the substrate is contacted by the solution, and (iii) the solution is cooled until supersaturation occurs, the improvement comprising: rotating the container on a symmetrical axis thereof until the solution is moved in a forced vortex which contacts the substrate in such a manner that the distance between the substrate and the free surface of said forced vortex during step (ii) leads to a Rayleigh Number which is less than about 1700.

Claim 17

In a method of growing a crystal layer on a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the substrate is contacted by the solution, and (iii) the solution is cooled until supersaturation occurs, the improvement comprising: rotating the container on a symmetrical axis thereof until the solution is moved in a forced vortex which contacts the substrate in such a manner that the distance between the substrate and the free surface of said forced vortex during step (ii) leads to a Rayleigh Number which is less than about 1700.

Claim 18

The method of claim 12 wherein step (iii) is effected after step (ii).

Claim 19

The method of claim 12 wherein step (iii) is effected before step (ii).

Claim 20

The method of claim 12 wherein steps (ii) and (iii) are effected simultaneously.

Claim 21

The method of claim 12 which further includes the step of; effecting relative movement between said forced solution vortex and the substrate for terminating the contact therebetween to terminate the growth of the crystal layer.

Claim 22

The method of claim 16 wherein said relative movement is effected by: stopping said container rotation for effecting the collapse of said forced vortex.

Claim 23

The method of claim 12 wherein: said container is drum-like and rotatable on said axis which is generally vertical and includes a side wall generally coaxial with said axis, and wherein said rotation is effected generally horizontally about said axis.

Claim 24

The method of claim 18 wherein the rotational velocity of said drum-like container during said contact is a velocity at which the distance between the substrate and the free surface of said forced vortex is such that the Rayleigh Number is less than about 1700.

Claim 25

The method of claim 19 wherein the solution contains immundities having densities greater than or less than the solution and wherein the rotational velocity of said drum-like container during said contact is a velocity at which the denser immundities remain at the bottom of the container and the less dense immundities float on said forced vortex out of contact with the substrate.

Claim 26

The method of claim 18 wherein the solution contains immundities having densities greater than or less than the solution and wherein the rotational velocity of said drum-like container during said contact is a velocity at which the denser immundities remain at the bottom of the container and the less dense immundities float on said forced vortex out of contact with the substrate.

Claim 27

The method of claim 18 which further includes the step of: positioning the substrate within said drum-like container to be constrained against vertical movement and radially movable horizontally toward and away from said axis between a first and a second stop member, respectively.

Claim 28

The method of claim 22 in which the substrate is less dense than the solution and effectuation of the rotating step further includes: contacting the substrate with the solution to move the substrate toward said axis and against said first stop member to expose a first surface thereof facing away from said axis and to impinge the solution on said first surface.

Claim 29

The method of claim 23 which further includes the step of : surrounding the exterior of said drum-like container with a first source of heat flux generally coaxial with said axis to orient said first surface at the cold end of the thermal gradient within the solution between sad first heat flux source and said first surface.

Claim 30

The method of claim 22 in which the substrate is denser than the solution and effectuation of the rotating step further includes: contacting the substrate with the solution to move the substrate away from said axis and against said second stop member to expose a second surface thereof facing toward said axis and to impinge the solution on said second surface.

Claim 31

The method of claim 25 which further includes the step of: surrounding a second source of heat flux with said drum-like container, said second heat flux source being generally coaxial with said axis to orient said second surface at the cold end of the thermal gradient within the solution between said second heat flux source and said second surface.

Claim 32

In a method of growing a crystal layer on a substrate from a heated, saturated solution rich in a solute made up of the crystal''s constituents, which method includes contacting the substrate with the solution, the solution including immundities having densities greater than or less than the solution, the improvement comprising: a. placing the solution in an inner, fluid-receiving region of a drum rotatable on a major axis, the drum further including an outer annular region, both regions including side walls generally coaxial with said axis and interconnected at a position above the level of the solution within said inner region; b. positioning at least one substrate within said outer annular region; c. rotating said drum until centrifugal action moves the solution in a first forced vortex up said side wall of said inner region, through said interconnection, and into said outer annular region, to contact the substrate with a second forced solution vortex, such that the distance of the substrate and the free surface of said second forced solution vortex during said contacting is one whereby the Rayleigh Number is less than about 1700, the denser immundities remaining at the bottom of the solution in said inner region, the less dense immundities floating on said first forced solution vortex at a level below said interconnection; and d. cooling the solution to effect growth of the crystal layer on the substrate by supersaturating the solution.

Claim 33

In a method of growing a crystal layer on a substrate from a heated, saturated solution rich in a solute made up of the crystal''s constituents, which method includes contacting the substrate with the solution, the solution including immundities having densities greater than or less than the solution, the improvement comprising: a. placing the solution in an inner, fluid-receiving region of a drum rotatable on a major axis, the drum further including an outer annular region, both regions including side walls generally coaxial with said axis and interconnected at a position above the level of the solution within said inner region; b. positioning at least one substrate within said outer annular region; c. rotating said drum until centrifugal action moves the solution in a first forced vortex up said side wall of said inner region, through said interconnection, and into said outer annular region, to contact the substrate with a second forced solution vortex, such that the distance of the substrate and the free surface of said second forced solution vortex during said contacting is one whereby the Rayleigh Number is less than about 1700, the denser immundities remaining at the bottom of the solution in said inner region, the less dense immundities floating on said first forced solution vortex at a level below said interconnection; and d. cooling the solution to effect growth of the crystal layer on the substrate by supersaturating the solution.

Claim 34

The method of claim 27 wherein step (b) includes: positioning the substrate within said outer annular region so that the substrate is constrained against vertical movement and is radially movable horizontally toward and away from said axis between a first and a second stop member, respectively.

Claim 35

The method of claim 28 in which the substrate is less dense than the solution and effectuation of step (c) further includes: contacting the substrate with the solution to move the substrate toward said axis and against said first stop member to expose a first surface thereof facing away from said axis and to impinge the solution of said second forced vortex on said first surface.

Claim 36

The method of claim 29 which further includes the step of: surrounding the exterior of said drum with a first source of heat flux generally coaxial with said axis to orient said first surface at the cold end of the thermal gradient within said second forced solution vortex between said first heat source and said first surface.

Claim 37

The method of claim 28 in which the substrate is denser than the solution and effectuation of step (c) further includes: contacting the substrate with the solution to move the substrate away from said axis and against said second stop member to expose a second surface thereof facing toward said axis and to impinge the solution of said second forced vortex on said second surface.

Claim 38

The method of claim 31 which further includes the step of: surrounding a second source of heat flux with said drum, said second heat source being generally coaxial with said axis, to orient said second surface at the cold end of the thermal gradient within said second forced solution vortex between said second Heat source and second surface.

Claim 39

In a method of growing a crystal layer on a substrate comprising growing a crystalline layer upon a selected surface of the substrate in a container from a super-saturated solution containing the constituents of the layer, the improvement comprising: forming the solution by centrifugal force into a forced vortex, comprising a substrate contacting layer, having a thickness such that the Rayleigh Number is less than about 1700, which contacts the surface of the substrate.

Claim 40

In a method of growing a crystal layer on a substrate comprising growing a crystalline layer upon a selected surface of the substrate in a container from a super-saturated solution containing the constituents of the layer, the improvement comprising: forming the solution by centrifugal force into a forced vortex, comprising a substrate contacting layer, having a thickness such that the Rayleigh Number is less than about 1700, which contacts the surface of the substrate.

Claim 41

In a method of growing a crystal layer on a substrate, comprising growing a crystalline layer upon a selected surface of the substrate in a container from a supersaturated solution containing the constituents of the layer, the improvement comprising: forming the solution by centrifugal force into a forced vortex having an immundity-free substrate contacting layer.

Claim 42

In a method of growing a crystal layer on a substrate, comprising growing a crystalline layer upon a selected surface of the substrate in a container from a supersaturated solution containing the constituents of the layer, the improvement comprising: forming the solution by centrifugal force into a forced vortex having an immundity-free substrate contacting layer.

Claim 45

The method of claim 35 which includes the further step of: positioning the substrate in a container and wherein said configurating step includes: placing the liquid body in said container, and rotating the container.

Claim 46

The method of claim 36 wherein during said contacting step the rotational velocity of said container during said contact is a velocity at which the distance between the selected substrate portion and the free surface of said forced vortex is such that the Rayleigh Number within said distance is less than about 1700.

Claim 47

The method of claim 37 wherein said contacting step is effected as a consequence of the effectuation of said configurating step.

Claim 48

In a method of growing a crystal layer on at least a portion of a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: imposing on the solution a forced vortex configuration which contacts the selected substrate surface portion to effect step (ii) in such a manner that any immundities contained in the solution lie without a region bounded by the distance between the selected surface and the free surface of said forced vortex.

Claim 49

In a method of growing a crystal layer on at least a portion of a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: imposing on the solution a forced vortex configuration which contacts the selected substrate surface portion to effect step (ii) in such a manner that any immundities contained in the solution lie without a region bounded by the distance between the selected surface and the free surface of said forced vortex.

Claim 50

The method of claim 39 wherein said forced vortex is imposed on the solution by rotating the container.

Claim 51

The method of claim 40 wherein the rotational velocity of the container during said contact is a velocity at which the distance between the selected substrate surface portion and the free surface of said forced solution vortex, measured generally perpendicular to said selected substrate surface is such that the Rayleigh Number with said distance is less than about 1700.

Claim 52

In a method of growing a crystal layer on a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: generating a forced vortex of the solution to cover the selected substrate surface therewith to effect step (ii) in such a manner that any immundities contained in the solution lie wiThout a region bounded by the distance between the selected substrate surface and the free surface of said forced vortex.

Claim 53

In a method of growing a crystal layer on a selected surface of a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the selected substrate surface is contacted with the solution, and (iii) the solution is cooled to a supersaturated condition, the improvement comprising: generating a forced vortex of the solution to cover the selected substrate surface therewith to effect step (ii) in such a manner that any immundities contained in the solution lie wiThout a region bounded by the distance between the selected substrate surface and the free surface of said forced vortex.

Claim 54

The method of claim 42 wherein said forced vortex is generated by rotating the container.

Claim 55

The method of claim 43 wherein the rotational velocity of the container during said contact is a velocity at which the distance between the selected substrate surface and the free surface of said forced solution vortex, measured generally perpendicular to said selected substrate surface is such that the Rayleigh Number without said distance is less than about 1700.

Claim 56

In a method of growing a crystal layer on a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the substrate is contacted by the solution, and (iii) the solution is cooled until supersaturation occurs, the improvement comprising: rotating the container on a symmetrical axis thereof at a sufficient rotational velocity to (1) move the solution in a forced vortex which contacts the substrate to effect step (ii), (2) effect retention at the bottom of the container of any immundities having a density greater than the solution and (3) effect a floating on said forced vortex out of contact with the substrate of any immundities having a density less than the solution.

Claim 57

In a method of growing a crystal layer on a substrate in a container from a solution rich in a solute of the crystal''s constituents wherein (i) a solvent in the container out of contact with the substrate is saturated at an elevated temperature with the solute to produce the solution, (ii) the substrate is contacted by the solution, and (iii) the solution is cooled until supersaturation occurs, the improvement comprising: rotating the container on a symmetrical axis thereof at a sufficient rotational velocity to (1) move the solution in a forced vortex which contacts the substrate to effect step (ii), (2) effect retention at the bottom of the container of any immundities having a density greater than the solution and (3) effect a floating on said forced vortex out of contact with the substrate of any immundities having a density less than the solution.

Claim 58

The method of claim 45 wherein step (iii) is effected after step (ii).

Claim 59

The method of claim 45 wherein step (iii) is effected before step (ii).

Claim 60

The method of claim 45 wherein step (ii) and (iii) are effected simultaneously.

Claim 61

The method of claim 45 which further includes the step of: effecting relative movement between said forced solution vortex and the substrate for terminating the contact therebetween to terminate the growth of the crystal layer.

Claim 62

The method of claim 49 wherein said relative movement is effected by: stopping said container rotation for effecting the collapse of said forced vortex.

Claim 63

The method of claim 45 wherein: said container is drum-like and rotatable on said axis which is generally vertical and includes a side wall generally coaxial with said axis, and wherein said rotation is effected generally horizontally about said axis.

Claim 64

The method of claim 51 wherein the rotational velocity of said drum-like container during said contact is a velocity at which the distance between the substrate and the free surface of said forced vortex is such that the Rayleigh Number is less than about 1700.

Claim 65

The method of claim 51 which further includes the step of: positioning the substrate within said drum-like container to be constrained against vertical movement and radially movable effectuation toward and away from said axis between a first and a second stop member, respectively.

Claim 66

The method of claim 53 in which the substrate is less dense than the solution and effectutation of the rotating step further includes: contacting the substrate with the solution to move the substrate toward said axis and against said first stop member to expose a first surface thereof facing away from said axis and to impinge the solution on said first surface.

Claim 67

The method of claim 54 which further includes the step of: surrounding the exterior of said drum-like container with a first source of heat flux generally coaxial with said axis to orient said first surface at the cold end of the thermal gradient within the solution between said first heat flux source and said first surface.

Claim 68

The method of claim 53 in which the substrate is denser than the solution and effectuation of the rotating step further includes: contacting the substrate with the solution to move the substrate away from said axis and against said second stop member to expose a second surface thereof facing toward said axis and to impinge the solution on said seconD surface.

Claim 69

The method of claim 56 which further includes the container, of: surrounding a second source of heat flux with said drum-like container said second heat flux source being generally coaxial with said axis to orient said second surface at the cold end of the thermal gradient within the solution between said second heat flux source and said second surface.

Claim 70

In a method of growing a crystal layer on a substrate from a heated, saturated solution rich in a solute made up of the crystal''s constituents, which method includes contacting the substrate with the solution, the solution including immundities having densities greater than or less than the solution, the improvement comprising: a. placing the solution in an inner, fluid-receiving region of a drum rotatable on a major axis, the drum further including an outer annular region, both regions including side walls generally coaxial with said axis and interconnected at a position above the level of the solution within said inner region; b. positioning at least one substrate within said outer annular region; c. rotating said drum until centrifugal action moves the solution in a first forced vortex up said side wall of said inner region, through said interconnection, and into said outer annular region, to contact the substrate with a second forced solution vortex, the denser immundities remaining at the bottom of the solution in said inner region, the less dense immundities floating on said first forced solution vortex at a level below said interconnection; and d. cooling the solution to effect growth of the crystal layer on the substrate by supersaturating the solution.

Claim 71

In a method of growing a crystal layer on a substrate from a heated, saturated solution rich in a solute made up of the crystal''s constituents, which method includes contacting the substrate with the solution, the solution including immundities having densities greater than or less than the solution, the improvement comprising: a. placing the solution in an inner, fluid-receiving region of a drum rotatable on a major axis, the drum further including an outer annular region, both regions including side walls generally coaxial with said axis and interconnected at a position above the level of the solution within said inner region; b. positioning at least one substrate within said outer annular region; c. rotating said drum until centrifugal action moves the solution in a first forced vortex up said side wall of said inner region, through said interconnection, and into said outer annular region, to contact the substrate with a second forced solution vortex, the denser immundities remaining at the bottom of the solution in said inner region, the less dense immundities floating on said first forced solution vortex at a level below said interconnection; and d. cooling the solution to effect growth of the crystal layer on the substrate by supersaturating the solution.

Claim 72

The method of claim 58 wherein step (b) includes: positioning the substrate within said outer annular region so that the substrate is constrained against vertical movement and is radially movable horizontally toward and away from said axis between a first and a second stop member, respectively.

Claim 73

The method of claim 59 in which the substrate is less dense than the solution and effectuation of step (c) further includes: contacting the substrate with the solution to move the substrate toward said axis and against said first stop member to expose a first surface thereof facing away from said axis and to impinge the solution of said second forced vortex on said first surface.

Claim 74

The method of claim 60 which further includes the step of: surrounding the exterior of said drum with a first source of heat flux generally coaxial with said axis to orient said first surface at the cold end of the thermal gradient within said second forced solution vortex between said first heat source and said first surface.

Claim 75

The method of claim 59 in which the substrate is denser than the solution and effectuation of step (c) further includes: contacting the substrate with the solution to move the substrate away from said axis and against said second stop member to expose a second surface thereof facing toward said axis and to impinge the solution of said second forced vortex on said second surface.