High frequency power transistor support

Claim 2

A support for a semiconductor device comprising: an electrically insulating, heat conductive base member having a surface, a layer of conductive material on said surface adapted to have said device secured thereto in projecting relationship to said base member, said layer having an exposed portion when said device is secured thereto, a second layer of conductive material on said surface of said base member, separate from the first mentioned layer, said second layer covering substantially all of said surface of said base member not covered by said first mentioned layer, and an insulating plate member having opposed surfaces, one of said opposed surfaces being secured to said base member, said plate member having an opening extending therethrough of sufficient dimensions to accommodate said device and being of such a shape and size that said portion of said first mentioned layer and two portions of said second layer on opposite sides of said device are exposed within said opening when said device and said plate member are in place, said two portions of said second layer being adapted to have connector wires attached thereto, the other of said opposed surfaces having thereon at least one conducting area having portions on opposite sides of said opening.

Claim 3

A sub-assembly of a power transistor adapted to be operated at microwave frequencies and support means therefor comprising: a base member of electrically insulating, heat conductive material having a planar surface, a first layer of conductive material on said surface, a transistor chip, having emitter, base and collector regions secured to said first layer of conductive material, one of the regions of said chip being electrically coupled to said first layer, a portion of said layer being exposed when said chip is in place, a second layer of conductive material on said surface, separated from said first layer and extending over substantially all of the remainder of said surface, an insulating plate member having opposed surfaces, one of said surfaces being secured to said base member, said plate member having an opening extending therethrough of such shape and size that said portion of said first layer and two portions of said second layer on opposite sides of said device are exposed within said opening when said plate member is secured to said base member, the other of said plate surfaces having at least two conducting areas thereon, one of which areas has portions on opposite sides of said opening, a plurality of conductors extending from another of the active regions of said device to said one of said conducting areas on said plate member, said conductors extending to each of said portions on opposite sides of said opening, a second plurality of conductors joining the remaining active regions of said transistor to said second layer on said base member and extending to each of said two portions of said second layer, and at least one conductor Joining said first layer on said base member to the other of said conducting areas on said plate member.

Claim 4

A sub-assembly of a power transistor adapted to be operated at microwave frequencies and support means therefor comprising: a base member of electrically insulating, heat conductive material having a planar surface, a first layer of conductive material on said surface, a transistor chip, having emitter, base and collector regions secured to said first layer of conductive material, one of the regions of said chip being electrically coupled to said first layer, a portion of said layer being exposed when said chip is in place, a second layer of conductive material on said surface, separated from said first layer and extending over substantially all of the remainder of said surface, an insulating plate member having opposed surfaces, one of said surfaces being secured to said base member, said plate member having an opening extending therethrough of such shape and size that said portion of said first layer and two portions of said second layer on opposite sides of said device are exposed within said opening when said plate member is secured to said base member, the other of said plate surfaces having at least two conducting areas thereon, one of which areas has portions on opposite sides of said opening, a plurality of conductors extending from another of the active regions of said device to said one of said conducting areas on said plate member, said conductors extending to each of said portions on opposite sides of said opening, a second plurality of conductors joining the remaining active regions of said transistor to said second layer on said base member and extending to each of said two portions of said second layer, and at least one conductor Joining said first layer on said base member to the other of said conducting areas on said plate member.

Claim 5

A sub-assembly as defined in claim 2 further comprising input tuning means comprising: means defining an aperture extending through said plate member at a location adjacent to one of said conductive areas thereon, conductive means filling said aperture, and a capacitor electrically coupled between said conductive means in said aperture and said one conductive area.

Claim 6

A sub-assembly as defined in claim 3 further comprising: means defining a second aperture extending through said plate member at a location adjacent to said one of said conductive areas on the opposite side thereof from the first mentioned aperture, conductive means filling said second aperture, and a second capacitor electrically coupled between said conductive means in said second aperture and said one conductive area.