Patent US3707410A successfully refreshed from Google Patents.
US3707410A
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US
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Method of manufacturing semiconductor devices
Assignee: Hitachi Ltd
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Filing: 1966-07-27
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Granted: 1972-12-26
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Expires: 1986-07-27
Abstract
Abstract METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICES HAVING A PLANAR SURFACE INCLUDING INTRODUCING A FIRST IMPURITY THROUGH A MASK INTO A SUBSTRATE TO FORM A FIRST DOPED AREA AND INTRODUCING A SECOND IMPURITY THROUGH THE MASK INTO A SELECTED PORTION OF THE SUBSTRATE TO A DEPTH GREATER THAN THE DEPTH OF THE FIRST DOPED AREA SO AS TO UNDERLIE SAID AREA, SAID SECOND IMPURITY HAVING A DIFFUSIN CONSTANT WHICH IS GREATER THEN THAT OF SAID FIRST IMPURITY IN THE SUBSTRATE.
Inventors
- 👤 Shoji Tauchi
- 👤 Ichiro Miwa
- 👤 Makoto Homma
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:49
CPC Classifications
H; H10; H10P; H10P32/00; H10D; H10D99/00; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/04; Y10S148/041; Y10S148/049; Y10S148/106; Y10S148/145; Y10S148/151; Y10S148/157; Y10S438/00; Y10S438/914; Y10S438/919
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-12-26 | 1976-06-26 | 1976-12-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-12-26 | 1980-06-26 | 1980-12-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-12-26 | 1984-06-26 | 1984-12-26 | $7700.00 | Window Closed / Lapsed |