Hermetically sealed semiconductor

Claim 1

A hermetically sealed coaxial transistor device capable of operating in the Gigahertz frequency range with a power rating of several watts comprising a metal stud forming a transistor collector terminal, said stud having a flange with a metal face intermediate its ends, an insulating ring having first and second metallized faces, the first metallized face contacting and being bonded to the metal face of the flange, a metal washer forming a first transistor electrode terminal and having a first metal face contacting and being bonded to the second metallized face, said metal washer having an outer diameter greater than any other component of the transistor device to form an electric shield between parts at opposite ends of the transistor device, an insulating washer having third and fourth metallized faces, said third face contacting and being bonded to a second metal face of the metal washer, said fourth face being electrically connected by a braze ring to a metal flange of a metal cap forming a second transistor terminal, said braze ring having faces bonded to the fourth face and the metal flange of the cap, said bonded faces forming a hermetically sealed cavity between the face of the flange and a face of the cap and within each of the insulating ring, metal washer, insulating washer, braze ring, and cap, said stud terminating in the cavity in a plateau proximate the intersection of the washers, a semiconductor component mounted on said plateau of said stud, said component including a collector region on one side thereof, said collector region abutting against the plateau in electrical and mechanical contact with said plateau, the opposite side of said component including base and emitter regions, a first pair of lead wires extending 180* in opposite directions from one of the regions to one face of the metal washer, and a second pair of lead wires extending 180* in opposite directions from the other region to the fourth metallized face.