Lateral transistor structure and process for forming the same

Abstract

Abstract A NOVEL TRANSISTOR WHEREIN CURRENT TRAVELS LATERALLY ALONG THE SEMI-CONDUCTOR SURFACE HAVING POLYCRYSTALLINE DIFFUSION PATHS IN ITS SURFACE WHICH SERVE AS THE MEANS OF INTRODUCING IMPURITIES IN A VERTICAL ORIENTATION INTO SURROUNDING SINGLE CRYSTAL MATERIAL BECAUSE OF THE MORE RAPID DIFFUSION RATE OF POLYCRYSTALLINE MATERIAL. APPROPRAITE COLLECTOR/EMITTER AND BASE CONTACTS ARE MADE THERETO. PROCESS FOR FORMING SUCH A LATERAL SEMI-CONDUCTOR BY DIFFUSING THROUGH A POLYCRYSTALLINE DIFFUSION PATH OR CHANNEL, DIFFUSION RAPIDLY TAKING PLACE IN A LATERAL DIRECTION THROUGH THE POLYCRYSTALLINE SILICON WHICH IS IN AN EPITAXIAL LAYER. IN AN ALTENATE EMBODIMENT, DIFFUSION IS THROUGH MONOCRYSTALLINE AREAS TO AN ULTRA HIGHLY DOPED SUBSTRATE AREA.

Inventors

• 👤 Madhukar B Vora

Bibliographic Details