Patent US3702991A successfully refreshed from Google Patents.
US3702991A
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US
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Magnetic domain memory structure
Assignee: Texas Instruments Inc
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Filing: 1971-03-30
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Granted: 1972-11-14
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Expires: 1991-03-30
Abstract
Abstract A magnetic memory structure is disclosed that includes a plurality of insulated gate field effect transistors (IGFET''s) on one surface of a semiconductor substrate. A predetermined pattern of propagating material overlies the IGFET devices, and a layer of magnetic material capable of supporting cylindrical magnetic domains is mechanically attached to the structure to overlie the propagating material.
Inventors
- 👤 Robert Thomas Bate
- 👤 Forrest Gerome West Jr
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 15:48
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/02; G11C19/08; G11C19/0866; G11C19/085; H; H01; H01F; H01F10/00; H01F10/06; H10; H10D; H10D48/00; H10D48/40
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
154 words
A compact magnetic memory structure comprising a plurality of memory units, each unit including: a. a non-magnetic substrate having first and second expitaxial layers of magnetic garnet material, said first layer being formed on one surface of said substrate and said second layer being formed on a surface opposite said one surface; b. a first body of semiconductor material having field-effect dector means formed in a first region on a major surface thereof and propagating means overlying a second region on said major surface, said major surface of said first body of semiconductor material being mounted adjacent said first epitaxial layer; and c. a second body of semiconductor material having field-effect dector means in a first region on a major surface thereof and propagating means overlying a second region on said major surface of said second body, said major surface of said second body of semiconductor material being mounted adjacent said second epitaxial layer.
Claim 2
Dependent Claim
154 words
A compact magnetic memory structure comprising a plurality of memory units, each unit including: a. a non-magnetic substrate having first and second expitaxial layers of magnetic garnet material, said first layer being formed on one surface of said substrate and said second layer being formed on a surface opposite said one surface; b. a first body of semiconductor material having field-effect dector means formed in a first region on a major surface thereof and propagating means overlying a second region on said major surface, said major surface of said first body of semiconductor material being mounted adjacent said first epitaxial layer; and c. a second body of semiconductor material having field-effect dector means in a first region on a major surface thereof and propagating means overlying a second region on said major surface of said second body, said major surface of said second body of semiconductor material being mounted adjacent said second epitaxial layer.
Claim 3
Independent Claim
91 words
A method for fabricating a magnetic memory comprising the steps of: a. forming field-effect transistor magnetic field detector means in one surface of a semiconductor substrate; b. forming a propagating pattern to overlie said one surface of said substrate, said propagating pattern being positioned to interact with said magnetic field detector means; c. positioning a body of magnetic material capable of supporting magnetic domains over said propagating pattern such that only operative areas of said body overlie a propagating structure; and d. mounting said body of magnetic material to said substrate.
Claim 4
Independent Claim
91 words
A method for fabricating a magnetic memory comprising the steps of: a. forming field-effect transistor magnetic field detector means in one surface of a semiconductor substrate; b. forming a propagating pattern to overlie said one surface of said substrate, said propagating pattern being positioned to interact with said magnetic field detector means; c. positioning a body of magnetic material capable of supporting magnetic domains over said propagating pattern such that only operative areas of said body overlie a propagating structure; and d. mounting said body of magnetic material to said substrate.
Claim 5
Dependent Claim
27 words
A method as set forth in claim 2 further including the step of forming a passivating layer intermediate said propagating pattern and said body of magnetic material.
Claim 6
Dependent Claim
20 words
A method of fabricating a magnetic memory as set forth in claim 2 wherein said propagating pattern comprises electrical conductors.
Claim 7
Dependent Claim
21 words
A method of fabricating a magnetic memory as set forth in claim 2 wherein said propagating pAttern comprises a magnetic film.
Claim 8
Dependent Claim
70 words
A magnetic memory comprising in combinations: a. a semiconductor substrate; b. a body of magnetic material capable of supporting magnetic domains secured adjacent one surface of said substrate; c. means coupled to said body for generating and controllably positioning magnetic domains therein; and d. detector means for sensing the location of said domains, said dector means comprising insulated gate field effect transistors integrated in said one surface of said substrate.
Claim 9
Dependent Claim
70 words
A magnetic memory comprising in combinations: a. a semiconductor substrate; b. a body of magnetic material capable of supporting magnetic domains secured adjacent one surface of said substrate; c. means coupled to said body for generating and controllably positioning magnetic domains therein; and d. detector means for sensing the location of said domains, said dector means comprising insulated gate field effect transistors integrated in said one surface of said substrate.
Claim 10
Dependent Claim
32 words
A magnetic memory as set forth in claim 6 wherein said transistors respectively include two gate regions and two drain regions enabling positive feedback, providing a magnetic field detector having amplification characteristics.
Claim 11
Dependent Claim
40 words
A magnetic memory as set forth in claim 6 including a passivating layer intermediate said body of magnetic material and said substrate, said passivating layer providing a separation between said body and said substrate to optimize magnetic field interaction therebetween.
Claim 12
Dependent Claim
23 words
A magnetic memory as set forth in claim 6 wherein said body of magnetic material comprises an epitaxial layer on a non-magnetic substrate.
Claim 13
Dependent Claim
32 words
A magnetic memory as set forth in claim 9 wherein said means for generating and controllably positioning magnetic domains comprises a pattern of conductive elements overlying said one surface of said substrate.
Claim 14
Dependent Claim
24 words
A magnetic memory as set forth in claim 10 wherein said means for generating and controllably positioning magnetic domains comprises a patterned magnetic film.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-14 | 1976-05-15 | 1976-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-14 | 1980-05-15 | 1980-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-14 | 1984-05-15 | 1984-11-14 | $7700.00 | Window Closed / Lapsed |