Patent US3702787A successfully refreshed from Google Patents.
US3702787A
Expired / Lapsed
US
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Method of forming ohmic contact for semiconducting devices
Assignee: Motorola Solutions Inc
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Filing: 1970-11-02
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Granted: 1972-11-14
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Expires: 1990-11-02
Abstract
Abstract THERE IS DISCLOSED AN OHMIC CONTACT FOR SILCON SEMICONDUCTING DEVICES IN WHICH THE SILICON IS OVERLAYED WITH A THIN FILM OF NICKEL-CHROMIUM FOLLOWED BY A THIN FILM OF NICKEL-CHROMIUM-SILVER OVER WHICH IS DEPOSITED A THICK FILM OF SILVER TO COMPLETE THE OHMIC CONTACT. A METHOD FOR FABRICATING THE OHMIC CONTACT IS ALSO DISCLOSED.
Inventors
- 👤 Robert Arthur Lowry Jr
- 👤 Billy Eual Smith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:27
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S438/00; Y10S438/928; Y10S438/964
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-11-14 | 1976-05-15 | 1976-11-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-11-14 | 1980-05-15 | 1980-11-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-11-14 | 1984-05-15 | 1984-11-14 | $7700.00 | Window Closed / Lapsed |