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Semiconductor laser devices utilizing light reflective metallic layers

Assignee: RCA Corp
•
Filing: 1966-08-16
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Granted: 1972-10-24
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Expires: 1986-08-16
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Abstract

Abstract A P-N junction semiconductor laser diode in which light reflective metallic layers are provided on the optically flat opposed surfaces of the diode. A transparent insulating coating having a particular thickness covers each of the semiconductor end surfaces. A thin metallic layer is disposed on each of the insulating layers. One of the metallic layers is sufficiently thick to totally reflect light emitted from the P-N junction, whereas the other metallic layer is such as to reflect approximately 99 percent of the radiated light. A transparent insulating material protects the exposed surfaces of each of the metallic layers.

Inventors

  • 👤 Sandor Caplan
  • 👤 Michael F Lamorte

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-25 11:10
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/02; H01S5/028

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 166 words
In a semiconductor diode of the type wherein a pair of electrical connections are soldered to metal coatings on a pair of opposed surfaces of P and N regions, respectively, of said diode to provide means to bias said diode in the forward direction, whereby to cause said diode to emit radiant energy along a P-N junction plane, said diode having two opposed planar ends transverse to, and including, said P-N junction plane, the improvement comprising a first layer of radiant-energy transmitting, electrically insulating material on one of said ends, said first layer having a thickness on the order of lambda /2n, where lambda is the wavelength of said radiant energy and n is the index of refraction of said insulating material, a second layer of a light-reflective metal on said first layer, said second layer having a thickness to substantially reflect said radiant energy, and a third protective layer of electrically insulating material comprising silicon monoxide, silicon dioxide or silicon nitride on said second layer.
Claim 2
Dependent Claim 166 words
In a semiconductor diode of the type wherein a pair of electrical connections are soldered to metal coatings on a pair of opposed surfaces of P and N regions, respectively, of said diode to provide means to bias said diode in the forward direction, whereby to cause said diode to emit radiant energy along a P-N junction plane, said diode having two opposed planar ends transverse to, and including, said P-N junction plane, the improvement comprising a first layer of radiant-energy transmitting, electrically insulating material on one of said ends, said first layer having a thickness on the order of lambda /2n, where lambda is the wavelength of said radiant energy and n is the index of refraction of said insulating material, a second layer of a light-reflective metal on said first layer, said second layer having a thickness to substantially reflect said radiant energy, and a third protective layer of electrically insulating material comprising silicon monoxide, silicon dioxide or silicon nitride on said second layer.
Claim 3
Dependent Claim 21 words
The improvement according to claim 1, wherein portions of said first and third layers are contiguous and surround said second layer.
Claim 4
Dependent Claim 21 words
The improvement according to claim 1, wherein the thickness of said second layer is sufficient to totally reflect said radiant energy.

References Cited (Backward Citations)

US3248670A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-10-24 1976-04-24 1976-10-24 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-10-24 1980-04-24 1980-10-24 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-10-24 1984-04-24 1984-10-24 $7700.00 Window Closed / Lapsed

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