Patent US3700932A successfully refreshed from Google Patents.
US3700932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge coupled devices
Assignee: AT&T Inc
•
Filing: 1970-06-18
•
Granted: 1972-10-24
•
Expires: 1990-06-18
Abstract
Abstract The specification describes a charge coupled device for information storage and processing in the form of discrete charge bundles. The device is characterized in that the storage medium is a semi-insulating material such as ZnO or ZnS. The carriers representing the information can normally be introduced and retrieved through ohmic contacts.
Inventors
- 👤 Dawon Kahng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:57
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/891; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D44/476; G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/287; G11C27/00; G11C27/04; H10D44/456; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D62/351; H10D62/386; H10D84/01; H10D84/0198; H10D84/40; H10D99/00; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
22 words
The device of claim 1, in which the semi-insulating material has a bandgap in the range of 1.5 volts to 8.0 volts.
Claim 2
Dependent Claim
26 words
The device of claim 1, in which the semi-insulating material is selected from the group consisting of ZnO, ZnS, CdS, CdSe, ZnSe, CdSe, BaTiO3, and KTaO3.
Claim 3
Dependent Claim
17 words
The device of claim 1, further including an MIS structure covering the surface opposite said first surface.
Claim 4
Dependent Claim
25 words
The device of claim 1, in which the transfer means comprises an insulating layer and a plurality of conductive field plates on the insulating layer.
Claim 5
Dependent Claim
62 words
The device of claim 5, in which the insulating or semi-insulating material meets the following criterion: epsilon E/e > nt where epsilon is the dielectric constant of the insulating layer, E is the electric field across the insulating layer, e is the electron charge, t is the thickness of the semi-insulating material, and n is the concentrations of carriers in the material.
Claim 6
Dependent Claim
10 words
The device of claim 6, in which nt < 6.1013.
Claim 7
Dependent Claim
130 words
A charge coupled device comprising a charge storage medium, a charge input region at a first location in he charge storage medium at which mobile charge carriers representing signal information can be introduced into the medium, a charge detection region at a second location in the charge storage medium at which charge carriers can be detected and charge storage and transfer means interconnecting the input region and the detection region, the charge storage and transfer means comprising a homogeneous insulating or semi-insulating charge storage and transfer layer, an insulating layer overlying said charge storage and transfer layer, at least four discrete electrodes disposed on the insulating layer and means for sequentially biasing the electrodes to transfer within the medium the charge carriers from the input region to the detection region.
References Cited (Backward Citations)
US3142045A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |