Patent US3699644A successfully refreshed from Google Patents.
US3699644A
Expired / Lapsed
US
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Method of dividing wafers
Assignee: GTE Sylvania Inc
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Filing: 1971-01-04
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Granted: 1972-10-24
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Expires: 1991-01-04
Abstract
Abstract A method of dividing silicon wafers includes the steps of marking a predetermined pattern on the wafer to be divided and applying a clear dielectric film over the marked surface thereof. The surface of the wafer is cut through the dielectric film along the pattern with the resulting debris being scattered over the protective film. The protective film along with the debris is then removed, for example, by washing in an appropriate solvent. The wafer is then broken along the cut surface for further processing.
Inventors
- 👤 Frank J Cocca
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 20:57
CPC Classifications
H; H10; H10P; H10P52/00; B; B28; B28D; B28D5/00; B28D5/0005; B28D5/0011; Y; Y10; Y10T; Y10T225/00; Y10T225/10; Y10T225/12; Y10T29/00; Y10T29/49; Y10T29/4998; Y10T29/49982; Y10T83/00; Y10T83/02; Y10T83/0333; Y10T83/0341; Y10T83/04; Y10T83/0405
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
110 words
A method of dividing a wafer of material having an electrostatic charge associated therewith including the steps of: applying a dielectric protective film over a surface of the wafer to be divided including the steps of applying a liquid dielectric material on the surface of the wafer, spinning the wafer to obtain substantially a uniform distribution and a predetermined thickness of the dielectric material on the surface of the wafer, and baking the wafer at an elevated temperature for a period of time to cure the dielectric material, cutting through the film into the surface of the wafer, and removing said dielectric film and the resulting debris from the wafer.
Claim 2
Independent Claim
110 words
A method of dividing a wafer of material having an electrostatic charge associated therewith including the steps of: applying a dielectric protective film over a surface of the wafer to be divided including the steps of applying a liquid dielectric material on the surface of the wafer, spinning the wafer to obtain substantially a uniform distribution and a predetermined thickness of the dielectric material on the surface of the wafer, and baking the wafer at an elevated temperature for a period of time to cure the dielectric material, cutting through the film into the surface of the wafer, and removing said dielectric film and the resulting debris from the wafer.
Claim 3
Independent Claim
116 words
A method of scribing a wafer of material having an electrostatic charge associated therewith including the steps of: applying a liquid dielectric material on the surface of the wafer, spinning the wafer to obtain substantially a uniform distribution and a predetermined thickness of the dielectric material on the surface of the wafer, baking the wafer at an elevated temperature for a period of time to cure the dielectric material into a film over the surface of the wafer, scribing through the film into the surface of the wafer, and washing the dielectric film from the surface of the wafer whereby the debris resulting from the scribing step is also removed from the surface of the wafer.
Claim 4
Independent Claim
116 words
A method of scribing a wafer of material having an electrostatic charge associated therewith including the steps of: applying a liquid dielectric material on the surface of the wafer, spinning the wafer to obtain substantially a uniform distribution and a predetermined thickness of the dielectric material on the surface of the wafer, baking the wafer at an elevated temperature for a period of time to cure the dielectric material into a film over the surface of the wafer, scribing through the film into the surface of the wafer, and washing the dielectric film from the surface of the wafer whereby the debris resulting from the scribing step is also removed from the surface of the wafer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |