Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
125 words
An electro-optical coupled-pair comprising: a light source; and a Schottky barrier detector, said detector including a lightly doped semiconductor wafer having a hollowed-out region characterized by outwardly and downwardly flared inclined smooth sidewalls and a flat smooth portion parallel to the top surface of said wafer, said wafer being positioned over said light source, said detector further including a metal layer on top of said top surface in vertical spaced adjacency to said flat smooth portion of saId hollowed-out region, and means encircling said metal layer and spaced therefrom on said top surface for making ohmic contact to said wafer, whereby isotropically emitted light from said light source is collected by said wafer and effectively coupled into said detector for the production of electron-hole pairs.
Claim 2
Dependent Claim
125 words
An electro-optical coupled-pair comprising: a light source; and a Schottky barrier detector, said detector including a lightly doped semiconductor wafer having a hollowed-out region characterized by outwardly and downwardly flared inclined smooth sidewalls and a flat smooth portion parallel to the top surface of said wafer, said wafer being positioned over said light source, said detector further including a metal layer on top of said top surface in vertical spaced adjacency to said flat smooth portion of saId hollowed-out region, and means encircling said metal layer and spaced therefrom on said top surface for making ohmic contact to said wafer, whereby isotropically emitted light from said light source is collected by said wafer and effectively coupled into said detector for the production of electron-hole pairs.
Claim 3
Dependent Claim
18 words
The coupled-pair as recited in claim 1 wherein said hollowed-out region is formed by anisotropically etching said wafer.
Claim 4
Dependent Claim
46 words
The coupled-pair as recited in claim 2 wherein said wafer is silicon having a <100> crystallographic orientation, and wherein said anisotropic etchant attacks all planes except the <111> planes of said crystal, whereby the angle of inclination of said sidewalls optimally couples energy into said wafer.
Claim 5
Dependent Claim
16 words
The coupled-pair as recited in claim 1 wherein said light source is a light emitting diode.
Claim 6
Dependent Claim
21 words
The coupled-pair as recited in claim 4 wherein said light emitting diode is a planar diffused gallium arsenide light emitting diode.
Claim 7
Dependent Claim
26 words
The coupled-pair as recited in claim 1 wherein any space between said light source and said detector is filled with a hard transparent optical coupling material.
Claim 8
Dependent Claim
15 words
The coupled-pair as recited in claim 6 wherein said optical coupling material is an epoxy.
Claim 9
Dependent Claim
25 words
The coupled-pair as recited in claim 1 wherein said hollowed-out region is in the form of a truncated pyramid formed by anisotropically etching said wafer.
Claim 10
Dependent Claim
61 words
The coupled-pair as recited in claim 8 wherein said wafer includes a V-shaped channel communicating at one end with said hollowed-out region and at its other end exteriorly to said wafer, said channel having been formed in the same anisotropic etching step used in the formation of said truncated pyramid, said channel adapted to carry contact leads to said light source.