Hybrid circuit power module

Claim 2

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface; a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, semiconductor bridge means for providing unidirectional current paths between said first contact means and said third and fourth contact means and for providing oppositely directed unidirectional current paths between said second contact means and said third and fourth contact means, said semiconductor bridge being formed in an integrated circuit having a first groove opening toward said output contact means and a second groove opening toward said input contact means, a first zone of a first conductivity type lying adjacent said first contact means and bounded on one edge by said first groove, a second zone of a second conductivity type lying adjacent said second contact means and separated from said first zone by said first groove, a third zone of said second conductivity type overlying said first zone to form a rectifying junction therewith, said third zone being divided by the second groove into two laterally spaced segments, a fourth zone of said first conductivity type overlying said second zone to form a rectifying junction therewith, said fourth zone being divided by the second groove into two laterally spaced segments, one of said input and output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor switch serving means for providing a unidirectional current path, fifth and sixth contact means conductively associated with said semiconductor switch serving means, and one of said fifth and sixth contact means associated with said semiconductor switch serving means providing a thermally conductive path between said semiconductor switch serving means and said substrate means.

Claim 3

A hybrid circuit power module according to claim 1 in which said semiconductor bridge means and said semiconductor switch serving means are formed of a single monocrystalline semiconductive element.

Claim 4

A hybrid circuit power module according to claim 1 additionally including a switch, one of said contact means being conductively associated with said switch and interposed between said switch and said substrate means to provide a thermally conductive path therebetween.

Claim 5

A hybrid circuit power module according to claim 1 additionally including a switch, said switch being comprised of a thyristor semiconductive element, one of said contact means being conductively associated with said thyristor semiconductive element and interposed between said switch and said substrate means to provide a thermally conductive path therebetween.

Claim 6

A hybrid circuit power module according to claim 1 in which one of said contact means associated with said switch serving means is conductively associated with one of said output contact means.

Claim 7

A hybrid circuit power module according to claim 1 in which one of said contact means is spaced from said substrate means and includes a connector strap.

Claim 8

A hybrid circuit power module according to claim 1 in which at least one of said contact means is spaced from said substrate means and includes connector strap means for dissipating lateral stress.

Claim 9

A hybrid circuit power module according to claim 1 in which one of said contact means is spaced from said substrate means and includes a connector strap having a stress relief ox bow formed therein.

Claim 10

A hybrid circuit power module according to claim 1 additionally including protective passivant means associated with said semiconductor bridge means and said semiconductor switch shunting means and cooperating with said contact means for encapsulation of semiconductor bridge means and switching shunting means.

Claim 11

A hybrid circuit power module according to claim 1 in which said substrate means is formed of a thermally conductive, electrically insulative material.

Claim 12

A hybrid circuit power module according to claim 1 in which said substrate means is formed of a base of thermally and electrically conductive material having a coating of thermally conductive, electrically insulative material supported thereon to form said surface.

Claim 13

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, semiconductor bridge means for providing unidirectional current paths between said first contact means and said third and fourth contact means and for providing oppositely directed unidirectional current paths between said second contact means and said third and fourth contact means, and one of said input and said output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor switch shunting means for providing a unidirectional current path around a switch, said shunting means being conductively associated with one of said output contact means to provide a unidirectional current path through said shunting means, all of said unidirectional current paths previously recited joined by said output contact means associated with said shunting means being like directed, and said shunting means including a contact means for interconnection with one terminal of the switch, one of said contact means associated with said semiconductor switch shunting means being interposed between and providing a thermally conductive path between said shunting means and said substrate means, and said output contact means associated with said shunting means providing a means for interconnecting to a remaining terminal of the switch.

Claim 14

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, semiconductor bridge means for providing unidirectional current paths between said first contact means and said third and fourth contact means and for providing oppositely directed unidirectional current paths between said second contact means and said third and fourth contact means, and one of said input and said output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor switch shunting means for providing a unidirectional current path around a switch, said shunting means being conductively associated with one of said output contact means to provide a unidirectional current path through said shunting means, all of said unidirectional current paths previously recited joined by said output contact means associated with said shunting means being like directed, and said shunting means including a contact means for interconnection with one terminal of the switch, one of said contact means associated with said semiconductor switch shunting means being interposed between and providing a thermally conductive path between said shunting means and said substrate means, and said output contact means associated with said shunting means providing a means for interconnecting to a remaining terminal of the switch.

Claim 15

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and sPaced therefrom, semiconductor bridge means formed of a monocrystalline semiconductive element having a first groove opening toward said output contact means and a second groove opening toward said input contact means, a first zone of a first conductivity type lying adjacent said first contact means and bounded on one edge by said first groove, a second zone of a second conductivity type lying adjacent said second contact means and separated from said first zone by the first groove, a third zone of said second conductivity type overlying said first zone to form a rectifying junction therewith, said third zone being divided by the second groove into two laterally spaced segments, and a fourth zone of said first conductivity type overlying said second zone to form a rectifying junction therewith, said fourth zone being divided by the second groove into two laterally spaced segments, and one of said input and said output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor switch shunting means for providing a unidirectional current path around a switch, said shunting means being conductively associated with one of said output contact means to provide a unidirectional current path through said shunting means, all of said unidirectional current paths previously recited joined by said output contact means associated with said shunting means being like directed, and said shunting means including a contact means for interconnection with one terminal of the switch, one of said contact means associated with said semiconductor switch shunting means being interposed between and providing a thermally conductive path between said shunting means and said substrate means, and said output contact means associated with said shunting means providing a means for interconnecting to a remaining terminal of the switch.

Claim 16

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and sPaced therefrom, semiconductor bridge means formed of a monocrystalline semiconductive element having a first groove opening toward said output contact means and a second groove opening toward said input contact means, a first zone of a first conductivity type lying adjacent said first contact means and bounded on one edge by said first groove, a second zone of a second conductivity type lying adjacent said second contact means and separated from said first zone by the first groove, a third zone of said second conductivity type overlying said first zone to form a rectifying junction therewith, said third zone being divided by the second groove into two laterally spaced segments, and a fourth zone of said first conductivity type overlying said second zone to form a rectifying junction therewith, said fourth zone being divided by the second groove into two laterally spaced segments, and one of said input and said output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor switch shunting means for providing a unidirectional current path around a switch, said shunting means being conductively associated with one of said output contact means to provide a unidirectional current path through said shunting means, all of said unidirectional current paths previously recited joined by said output contact means associated with said shunting means being like directed, and said shunting means including a contact means for interconnection with one terminal of the switch, one of said contact means associated with said semiconductor switch shunting means being interposed between and providing a thermally conductive path between said shunting means and said substrate means, and said output contact means associated with said shunting means providing a means for interconnecting to a remaining terminal of the switch.

Claim 17

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, fifth contact means laterally spaced from said first and second contact means, sixth contact means laterally spaced from said third and fourth contact means and having a portion overlying said fifth contact means, a monocrystalline semiconductive element having first and second opposed major surfaces, having first and second laterally spaced grooves opening toward said first major surface, and having a third groove opening toward said second major surface and intersecting both the first and second grooves comprised of a first zone of a first conductivity type associated with said first contact means and bounded on one edge by the first groove, a second zone of a second conductivity type associated with said second contact means and bounded by the first and second grooves, a third zone of said first conductivity type associated with said fifth contact means and bounded on one edge by the second groove, a fourth zone of said second conductivity type overlying said first zone and forming a rectifying junction therewith, said fourth zone being divided by the third groove into two segments, each of said fourth zone segments being associated with a separate one of said input contact means, a fifth zone of said first conductivity type overlying said second zone and forming a rectifying junction therewith, and being divided by the third groove into two segments, each of said fifth zone segments being associated with a separate one of said input contact means, a sixth zone of said second conductivity type overlying said third zone and forming a rectifying junction therewith and being conductively associated witH said sixth contact means, and said first, second, and fifth contact means lying along said first major surface and said third, fourth, and sixth contact means lying along said second major surface, and said contact means associated with one of said major surfaces of said semiconductive element providing a low impedance thermally conductive path from said semiconductive element to said substrate means.

Claim 18

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, fifth contact means laterally spaced from said first and second contact means, sixth contact means laterally spaced from said third and fourth contact means and having a portion overlying said fifth contact means, a monocrystalline semiconductive element having first and second opposed major surfaces, having first and second laterally spaced grooves opening toward said first major surface, and having a third groove opening toward said second major surface and intersecting both the first and second grooves comprised of a first zone of a first conductivity type associated with said first contact means and bounded on one edge by the first groove, a second zone of a second conductivity type associated with said second contact means and bounded by the first and second grooves, a third zone of said first conductivity type associated with said fifth contact means and bounded on one edge by the second groove, a fourth zone of said second conductivity type overlying said first zone and forming a rectifying junction therewith, said fourth zone being divided by the third groove into two segments, each of said fourth zone segments being associated with a separate one of said input contact means, a fifth zone of said first conductivity type overlying said second zone and forming a rectifying junction therewith, and being divided by the third groove into two segments, each of said fifth zone segments being associated with a separate one of said input contact means, a sixth zone of said second conductivity type overlying said third zone and forming a rectifying junction therewith and being conductively associated witH said sixth contact means, and said first, second, and fifth contact means lying along said first major surface and said third, fourth, and sixth contact means lying along said second major surface, and said contact means associated with one of said major surfaces of said semiconductive element providing a low impedance thermally conductive path from said semiconductive element to said substrate means.

Claim 19

A hybrid circuit power module according to claim 14 additionally including a switch conductively associated with one of said contact means and lying in thermally conductive relation to said substrate means.

Claim 20

A monocrystalline semiconductive element having first and second opposed major surfaces, having first and second laterally spaced grooves opening toward said first major surface, and having a third groove opening toward said second major surface comprised of a first zone of a first conductivity type lying adjacent said first major surface and bounded on one edge by the first groove, a second zone of a second conductivity type lying adjacent said first major surface and bounded by the first and second grooves, a third zone of said first conductivity type lying adjacent said first major surface and bounded on one edge by the second groove, a fourth zone of said second conductivity type overlying said first zone and forming a rectifying junction therewith, said fourth zone being divided by the third groove into two segments, a fifth zone of said first conductivity type overlying said second zone and forming a rectifying junction therewith, said fifth zone being divided by the third groove into two segments, and a sixth zone of said second conductivity type overlying said third zone and forming a rectifying junction therewith.

Claim 21

A monocrystalline semiconductive element having first and second opposed major surfaces, having first and second laterally spaced grooves opening toward said first major surface, and having a third groove opening toward said second major surface comprised of a first zone of a first conductivity type lying adjacent said first major surface and bounded on one edge by the first groove, a second zone of a second conductivity type lying adjacent said first major surface and bounded by the first and second grooves, a third zone of said first conductivity type lying adjacent said first major surface and bounded on one edge by the second groove, a fourth zone of said second conductivity type overlying said first zone and forming a rectifying junction therewith, said fourth zone being divided by the third groove into two segments, a fifth zone of said first conductivity type overlying said second zone and forming a rectifying junction therewith, said fifth zone being divided by the third groove into two segments, and a sixth zone of said second conductivity type overlying said third zone and forming a rectifying junction therewith.

Claim 22

The combination comprising a monocrystalline semiconductive element according to claim 16, first, second and fifth contact means conductively associated with said first, second, and third zones, respectively, third and fourth contact means each being conductively associated with a separate one of said segments of said fourth and fifth zones, said segments associated with each of said third and fourth contact means being contiguous, sixth contact means being conductively associated with said sixth zone, and protective passivant means associated with said semiconductive element and cooperating with said contact means to encapsulate said semiconductive element.

Claim 23

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, semiconductor bridge means for providing unidirectional current paths between said first contact means and said third and fourth contact means and for providing oppositely directed unidirectional current paths between said second contact means and said third and fourth contact means, and one of said input and output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor thyristor element means comprised of an endmost layer of N conductivity type, an intermediate layer of P conductivity type, an intermediate layer of N conductivity type, and an endmost layer of P conductivity type, said layers being consecutively arranged, first thyristor contact means conductively associated with one of said endmost layers and said intermediate layer adjacent thereto, second thyristor contact means conductively associated with a remaining of said endmost layers and said intermediate layer adjaCent thereto, and one of said thyristor contact means providing a thermally conductive path from said thyristor element to said substrate means.

Claim 24

A hybrid circuit power module comprising thermally conductive substrate means providing an electrically insulative major surface, a power inverter mounted in thermally conductive relation on said substrate means surface including first and second laterally spaced electrically conductive output contact means, third and fourth laterally spaced electrically conductive input contact means each having a portion overlying both of said first and second contact means and spaced therefrom, semiconductor bridge means for providing unidirectional current paths between said first contact means and said third and fourth contact means and for providing oppositely directed unidirectional current paths between said second contact means and said third and fourth contact means, and one of said input and output contact means being interposed between and providing a thermally conductive path between said semiconductor bridge means and said substrate means, semiconductor thyristor element means comprised of an endmost layer of N conductivity type, an intermediate layer of P conductivity type, an intermediate layer of N conductivity type, and an endmost layer of P conductivity type, said layers being consecutively arranged, first thyristor contact means conductively associated with one of said endmost layers and said intermediate layer adjacent thereto, second thyristor contact means conductively associated with a remaining of said endmost layers and said intermediate layer adjaCent thereto, and one of said thyristor contact means providing a thermally conductive path from said thyristor element to said substrate means.