Method of obtaining phased growth of epitaxial layers
Abstract
Abstract DISCLOSED IS A METHOD OF PREPARING SUBSTRATES THAT HAVE POSITIONS AT WHICH NUCLEATION PREFERENTIALLY TAKES PLACE DURING EPITAXIAL DEPOSITION OF A MATERIAL HAVING A SUBSTANTIALLY DIFFEENT CRYSTAL LATTICE STRUCTURE THAN THE SUBSTRATE MATERIAL. A SUBSTRATE, ORIENTED TO PRESENT A PRESELECTED LOW INDEX REFERENCE CRYSTAL PLANE, IS CUT ALONG A PLANE HAVING A PRESELECTED ANGLE OF INCLINATION TO THE LOW INDEX CRYSTAL PLANE, THE AXIS OF INCLINATION ALSO HAVING A PRESELECTED ANGLE WITH A DIRECTION OF CLOSE-PACKED ATOMS IN THE LOW INDEX CRYSTAL PLANE. THESE PRESELECTED ANGLES ARE SO CHOSEN THAT CRYSTAL STEPS AND KNICKS ARE FORMED IN PRESELECTED POSITIONS ALONG THE SURFACE OF THE SUBSTRATE. SINCE NUCLEI PREFERENTIALLY FORM AT KINKS AND CRYSTAL STEPS, PROPER SELECTION OF THE CUTTING PLANE ENABLES CONTROL OF THE LOCATION OF NUCLEI WHICH ARE SUBSTANTIALLY IN PHASE WITH ONE ANOTHER ACROSS THE SUBSTRATE SURFACE.
Inventors
- 👤 Lawrence Dean Dyer
Bibliographic Details
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