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US3697832A
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Plural photo-diode target array
Assignee: NEC Corp
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Filing: 1971-01-21
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Granted: 1972-10-10
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Expires: 1991-01-21
Abstract
Abstract A plural photo-diode array, used as a target for silicon visicon image transmitting apparatus, employs a substrate having an impurity concentration profile which decreases about one substrate surface. The diodes are formed by diffused areas at that substrate surface comprising an impurity of opposite conductivity types.
Inventors
- 👤 Masafumi Hanaoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:42
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/122
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
112 words
A photo-diode array target characterized in that a silicon monocrystalline substrate includes a first impurity concentration distribution comprising about 5 X 1016 (atom/cm3) at the surface of said substrate, 1015 (atom/cm3) at depth in said substrate greater than several microns from said substrate surface, said first impurity concentration gradually decreasing from 5 X 1016 to 1015 (atom/cm3) in said depth of several microns in said substrate from said substrate surface, and wherein a second impurity having an opposite conductivity to that of the substrate is diffused from the surface of said substrate having said higher impurity concentration, whereby plural diodes are arranged on the surface of the substrate in a mosaic manner.
Claim 2
Dependent Claim
112 words
A photo-diode array target characterized in that a silicon monocrystalline substrate includes a first impurity concentration distribution comprising about 5 X 1016 (atom/cm3) at the surface of said substrate, 1015 (atom/cm3) at depth in said substrate greater than several microns from said substrate surface, said first impurity concentration gradually decreasing from 5 X 1016 to 1015 (atom/cm3) in said depth of several microns in said substrate from said substrate surface, and wherein a second impurity having an opposite conductivity to that of the substrate is diffused from the surface of said substrate having said higher impurity concentration, whereby plural diodes are arranged on the surface of the substrate in a mosaic manner.
References Cited (Backward Citations)
US3548233A
Cited
US3574143A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-10 | 1976-04-10 | 1976-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-10 | 1980-04-10 | 1980-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-10 | 1984-04-10 | 1984-10-10 | $7700.00 | Window Closed / Lapsed |