Method of selective chemical vapor deposition

Abstract

Abstract TUNGSTEN AND OTHER REFRACTORY METALS SUCH AS MOLYBDENUM, TANTALUM, HAFNIUM, ZIRCONIUM, RHENIUM, ETC. AND METLLOIDS SUCH AS SILICONB ARE CAUSED TO BE DEPOSITED SELECTIVELY BY THE HYDROGEN REDUCTION OF THEIR FLUORIDES AND CHLORIDES. THE PROCESS IS TERMED SELECTICE-CHEMICAL VAPOR DEPOSITION SINCE THE METAL IS DEPOSITED ONLY ON PREPATTERNED AREAS OF A SUBSTRATE. THE SUBSTRATE IS SUITABLY A GLASS SUCH AS BOROSILICATE, BROALUMINO-SILICATE, PHOSPHO-ALUMINO-SILICATE, PHOSPHO-SILICATE OR A SODA-LIME GLASS. THE SELECTIVE CHEMICAL VAPOR DEPOSITION PROCESS OCCURS WHEN TWO SURFACES WITH DIFFERENT CHEMICAL REACTIVITIES ARE EXPOSED TO THE CHEMICAL VAPOR DEPOSITION ENVIRONMENT. THE PREPATTERNED AREAS PROVIDED ONE OF THESE SURFACES, SUCH AREAS COMPRISING A NUCLEATING LAYER OF A MATERIAL SUCH AS CHROMIUM, TUNGSTEN, MOLYBDENUM, COPPER, ALUMINUM, SILICON, SILICON DIOXIDE, ALUMINUM OXIDE, SILICON NITRILE, AND THE LIKE OR OF COMPOSITE LAYERS OF CHROMIUM-COPPER, CHROMIUM-COPPER-CHROMIUM, AND THE LIKE. THE OTHER SURFACE IS PROVIDED BY THE REMAINDER OF THE SURFACE, I.E. THE EXPOSED SURFACE OF THE SUBSTRATE. THE SURFACE PROVIDED BY THE PREPATTERNED AREA ACTS AS A METAL NUCLEATION SITE WHILE THE SUBSTRATE, I.E., THE GLASS SURFACE CHEMICALLY ERODES (ABLATES) AND THE METAL DOES NOT NUCLEATE THEREON. IN CONSIDERING THE MECHANISM OF THE INVENTURE PROCESS, THE DEPOSITION REACTIONS AND SIMULTANEOUS ABLATION REACTIONS ACTING IN CLOSE PROXIMITY ARE AN ESSENTIAL ELEMENT THEREOF.

Inventors

• 👤 Jerome J Cuomo
• 👤 Robert A Laff

Bibliographic Details