Abstract Air isolated integrated circuit having a support structure formed of an insulating material with a semiconductor body carried by the support structure, the body having a generally planar surface. The semiconductor body has moats formed therein in a pattern which extends into the semiconductor body so that there are provided a plurality of semiconductor islands. The moats are interrupted between at least certain of the islands so that bridges are formed between said certain islands. At least one semiconductor device is formed in each of the islands and metallization is provided which interconnects the semiconductor devices to form an integrated circuit. At least a portion of the metallization passes over the bridge between said certain islands. In the method, moats are formed in a pattern in a semiconductor body to provide a plurality of semiconductor islands with the moats being interrupted between at least certain of the islands so that there is a bridge formed between said certain islands. Semiconductor devices can be formed in the semiconductor body either prior to or after the formation of the moats in the semiconductor body. Metallization is formed on the semiconductor body to interconnect the semiconductor devices with at least a portion of the metallization passing over the bridge between said certain islands.
In a semiconductor integrated circuit, a support structure formed of an insulating material, a body of semiconductor material carried by the support structure, said body having a generally planar surface, said body having a plurality of moats formed therEin opening through said surface to form a pattern, the moats extending into the semiconductor body so that they at least are in close proximity to the support structure whereby a plurality of islands of semiconductor material are provided, said moats between at least certain of said islands being interrupted so that a bridge of the semiconductor material of the body integral with the body is formed between and interconnects said certain islands, at least one semiconductor device formed on each of said islands, an insulating layer disposed on the surfaces of said islands and on said bridge and metallization out of contact with said moats and disposed on said insulating layer interconnecting said semiconductor devices to form an integrated circuit, at least a portion of said metallization passing over said bridge and serving to interconnect at least portions of two of said semiconductor devices.
Claim 2
Dependent Claim
183 words
In a semiconductor integrated circuit, a support structure formed of an insulating material, a body of semiconductor material carried by the support structure, said body having a generally planar surface, said body having a plurality of moats formed therEin opening through said surface to form a pattern, the moats extending into the semiconductor body so that they at least are in close proximity to the support structure whereby a plurality of islands of semiconductor material are provided, said moats between at least certain of said islands being interrupted so that a bridge of the semiconductor material of the body integral with the body is formed between and interconnects said certain islands, at least one semiconductor device formed on each of said islands, an insulating layer disposed on the surfaces of said islands and on said bridge and metallization out of contact with said moats and disposed on said insulating layer interconnecting said semiconductor devices to form an integrated circuit, at least a portion of said metallization passing over said bridge and serving to interconnect at least portions of two of said semiconductor devices.
Claim 3
Dependent Claim
51 words
An integrated circuit as in claim 1 wherein said semiconductor body is formed of silicon, wherein said insulating layer is formed of silicon dioxide, and wherein said support structure includes a layer of silicon dioxide adjacent to said semiconductor body and a support layer adherent to said layer of silicon dioxide.
Claim 4
Dependent Claim
16 words
An integrated circuit as in claim 2 wherein said support layer is formed of polycrystalline silicon.
Claim 5
Dependent Claim
15 words
An integrated circuit as in claim 1 wherein said moats are generally V-shaped in cross-section.