Patent US3696273A successfully refreshed from Google Patents.
US3696273A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bilateral, gate-controlled semiconductor devices
Assignee: US Philips Corp
•
Filing: 1970-03-31
•
Granted: 1972-10-03
•
Expires: 1990-03-31
Abstract
Abstract A bilateral, gate-controlled thyristor having five layers has end zones, with respect to the main current flow direction, have adjacent peripheries proximate to the gate electrode in an overlapping relationship while having adjacent peripheries distal to the gate electrode in a spaced relationship. Improved commutation is obtained without any loss of operational modes with this structure.
Inventors
- 👤 Alan Foster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 21:54
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
256 words
A bilateral gate-controlled semiconductor device having a semiconductor body comprising an inner zone of one conductivity type between first and second outer zones of the opposite conductivity type, said first and second outer zones extending at first and second opposite sides of said body respectively and forming p-n junctions with said inner zone, first and second main current carrying electrodes in ohmic contact with said first and said second outer zones respectively, first and second further zones of the one conductivity type, said first and said second further zones forming p-n junctions with said first and said second outer zones respectively and extending at said first and said opposite sides of said body respectively in ohmic contact with said first and said second main current carrying electrodes, a gate zone of the one conductivity type at said first side of the body, said gate zone forming a p-n junction with said first outer zone, said gate zone being spaced from said first further zone and being situated opposite a portion of said second further zone, and a single gate electrode at said first side of the body in ohmic contact with said gate zone and said first outer zone, said first and said second further zones being situated between said first and said second main current carrying electrodes with respect to current flow direction so that parts of their adjacent peripheries proximate to said gate electrode are in overlapping relationship and other parts off their adjacent peripheries distal to said gate electrode are in spaced relationship.
Claim 2
Dependent Claim
256 words
A bilateral gate-controlled semiconductor device having a semiconductor body comprising an inner zone of one conductivity type between first and second outer zones of the opposite conductivity type, said first and second outer zones extending at first and second opposite sides of said body respectively and forming p-n junctions with said inner zone, first and second main current carrying electrodes in ohmic contact with said first and said second outer zones respectively, first and second further zones of the one conductivity type, said first and said second further zones forming p-n junctions with said first and said second outer zones respectively and extending at said first and said opposite sides of said body respectively in ohmic contact with said first and said second main current carrying electrodes, a gate zone of the one conductivity type at said first side of the body, said gate zone forming a p-n junction with said first outer zone, said gate zone being spaced from said first further zone and being situated opposite a portion of said second further zone, and a single gate electrode at said first side of the body in ohmic contact with said gate zone and said first outer zone, said first and said second further zones being situated between said first and said second main current carrying electrodes with respect to current flow direction so that parts of their adjacent peripheries proximate to said gate electrode are in overlapping relationship and other parts off their adjacent peripheries distal to said gate electrode are in spaced relationship.
Claim 3
Dependent Claim
50 words
A bilateral gate-controlled semiconductor device as claimed in claim 1, wherein the ohmic contact between the first main current carrying electrode and the first further zone is laterally spaced from the overlapping of adjacent peripheries of the first and second further zones with respect to the direction of current flow.
Claim 4
Dependent Claim
40 words
A bilateral gate-controlled semiconductor device as claimed in claim 1, wherein the semiconductor body is in the form of a substantially circular disc, the gate zone being situated substantially centrally of the disc at the first side of the body.
Claim 5
Dependent Claim
71 words
A bilateral gate-controlled semiconductor device as claimed in claim 3, wherein the parts of the adjacent peripheries of the first and second further zones which are in overlapping relationship in the proximity of the substantially centrally disposed gate zone are disposed radially at one side of the gate zone, and the adjoining parts of their adjacent peripheries which are in spaced relationship are disposed extending substantially parallel to a diametrical direction.
Claim 6
Dependent Claim
47 words
A bilateral gate-controlled semiconductor device as claimed in claim 4, wherein the substantially centrally disposed gate zone is substantially C-shaped having a re-entrant portion which faces at said one side of the gate zone the radially disposed overlapping peripheral parts of the first and second further zones.
Claim 7
Dependent Claim
48 words
A bilateral gate-controlled semiconductor device as claimed in claim 4, wherein the gate electrode is of substantially circular outline and is substantially centrally disposed forming ohmic contact with the gate zone and the first outer zone, and the first main current carrying electrode is of substantially annular form.
Claim 8
Dependent Claim
95 words
A bilateral gate-controlled semiconductor device as claimed in claim 4, wherein the first and second further zones where they extend at the first and second sides of the body both comprise interruptions where portions of the first and second outer zones respectively extend at said first and second opposite sides of the body, the first and second main current carrying electrodes extending at said first and second opposite sides respectively in contact with said portions and shorting the p-n junctions between said portions of the opposite conductivity type and the first and second further zones.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-03 | 1976-04-03 | 1976-10-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-03 | 1980-04-03 | 1980-10-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-03 | 1984-04-03 | 1984-10-03 | $7700.00 | Window Closed / Lapsed |