Abstract A Schottky barrier diode includes a body of a semiconductor material of one conductivity type having a guard ring region of the opposite conductivity type therein at a surface of the body. The guard ring extends along the surface of the body in a closed path. A layer of an insulating material is on the surface of the semiconductor body and has an opening therethrough extending to the area of the semiconductor body surface within the guard ring. A metal layer is on the surface of the semiconductor body within the opening in the insulating layer and forms a surface barrier rectifying junction with the semiconductor body. The metal film is also coated on the insulating layer and extends over the guard ring.
Inventors
👤 Arjun Nath Saxena
Bibliographic Details
Application Number—
JurisdictionUS
Data Sourcegoogle_patents
Last Synchronized2026-11-09 04:50
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
30 words
A semiconductor device in accordance with claim 1 including a layer of an electrical insulating material between the surface of the body and the second portion of the metal film.
Claim 2
Dependent Claim
201 words
A semiconductor device comprising a body of a semiconductor material of one conductivity type having a surface, a narrow guard ring region of a conductivity type opposite to that of said body in the body at said surface, said guard ring region extending in a closed path along said surface and forming a PN junction with said body, a layer of an electrical insulating material on said surface of the body, said insulating layer having an opening therethrough extending to a portion of said body surface within said guard ring region, and a metal film on said portion of the body surface within the opening in the insulating layer and on said insulating layer, the portion of the metal film on said body surface providing a surface barrier rectifying junction with said body and the portion of the metal film on said insulating layer extending to at least the guard ring region along the entire length of the path of the guard ring region, said metal film being completely spaced from said guard ring region, the thickness of the insulating layer being such that under reverse bias condition a conduction channel electrically connects the metal layer to the guard ring region.
Claim 3
Dependent Claim
26 words
A semiconductor device in accordance with claim 3 in which the edge of the opening in the insulating layer is spaced from the guard ring region.
Claim 4
Dependent Claim
35 words
A semiconductor device in accordance with claim 4 in which the portion of the insulating layer which extends from said opening to said guard ring region is thinner than the rest of the insulating layer.