US3694707A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
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Filing: 1970-09-29
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Granted: 1972-09-26
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Expires: 1990-09-29
Abstract
Abstract A semiconductor device comprising a semiconductor substrate having a pn-junction of which end is exposed at one main face of the substrate, and an insulating film covering the exposed end of the pn-junction, the protecting film including arsenic and phosphorus.
Inventors
- 👤 Masakatsu Nakamura
- 👤 Toshio Yonezawa
- 👤 Taketoshi Kato
- 👤 Masaharu Watanabe
- 👤 Minoru Akatsuka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 09:22
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/10; H10W74/131; H10D; H10D99/00; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/043; Y10S148/118
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
29 words
A semiconductor device of claim 1, wherein said part of the surface of said substrate is a main surface at which a pn-junction formed in said substrate is exposed.
Claim 2
Dependent Claim
29 words
A semiconductor device of claim 1, wherein said part of the surface of said substrate is a side surface etched selectively at which a pn-junction formed in said substrate.
Claim 3
Dependent Claim
109 words
A semiconductor device having a strain-compensated passivating film comprising: a. a silicon semiconductor substrate; b. a first insulating film directly covering at least a part of the surface of said substrate; and c. a second silicon dioxide filM deposited on said first film, and containing arsenic and phosphorus to compensate for a strain between said substrate and film, the impurity concentrations of said arsenic and phosphorus being from 2 X 1019 to 4 X 1021 atoms/cm3 and from 1 X 1020 to 4 X 1021 atoms/cm3, respectively, and said arsenic and phosphorus being mixed in a ratio of atomic concentrations of from 1 : 1 to 1 : 10.
Claim 4
Dependent Claim
29 words
A semiconductor device of claim 4, wherein said part of the surface of said substrate is a main surface at which a pn-junction formed in said substrate is exposed.
Claim 5
Dependent Claim
31 words
A semiconductor device of claim 4, wherein said part of the surface of said substrate is a side surface etched selectively at which a pn-junction formed in said substrate is exposed.
Claim 6
Dependent Claim
20 words
A semiconductor device of claim 1, wherein said arsenic and said phosphorus are included in said silicon dioxide film simultaneously.
Claim 7
Dependent Claim
21 words
A semiconductor device of claim 4, wherein said arsenic and said phosphorus are included in said second silicon dioxide film simultaneously.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-26 | 1976-03-27 | 1976-09-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-26 | 1980-03-27 | 1980-09-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-26 | 1984-03-27 | 1984-09-26 | $7700.00 | Window Closed / Lapsed |