US3553036A
Expired / Lapsed
US
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Production of doped zones in semiconductor bodies
Assignee: Telefunken Patentverwertungs GmbH
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Filing: 1966-10-11
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Granted: 1971-01-05
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Expires: 1986-10-11
Abstract
Abstract A METHOD FOR PRODUCING DOPED ZONES IN SELECTED REGIONS OF ONE SURFACE OF A SEMICONDUCTOR BODY BY THE DIFFUSION IN OF A SELECTED IMPURITY, THE METHOD BEING CARRIED OUT BY COVERING THOSE REGIONS IN WHICH DOPED ZONES ARE NOT TO BE FORMED WITH AN OXIDIZING MATERIAL WHICH SERVES TO OXIDIZE THE SELECTED IMPURITY SO AS TO CONVERT IT INTO A NONDIFFUSION SUBSTANCE, THEREBY PERMITTING THE SELECTED IMPURITY TO DIFFUSE INTO ONLY THE SELECTED SURFACE REGIONS.
Inventors
- 👤 Werner Langheinrich
- 👤 Max Kuisl
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 12:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6922; H10P14/6923; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/02; Y10S148/043; Y10S148/118; Y10S438/00; Y10S438/914; Y10S438/92; Y10S438/942; Y10S438/945
Claims Analysis
Total Claims: 0
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References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-01-04 | 1974-07-06 | 1975-01-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-01-04 | 1978-07-06 | 1979-01-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-01-04 | 1982-07-06 | 1983-01-05 | $7700.00 | Window Closed / Lapsed |