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US3691631A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of making a voltage actuatable switch

Assignee: Conductron Corp
•
Filing: 1970-01-29
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Granted: 1972-09-19
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Expires: 1990-01-29
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Abstract

Abstract A voltage actuated switch comprises a conductor, an essentially defect-free layer of insulating material which has a portion thereof that overlies and engages at least a part of a surface of that conductor and that has a predetermined thickness and resistivity to enable it to have a relatively high breakdown voltage, a tiny area of that layer of insulating material which has a thickness and resistivity that enable it to have a predetermined lower breakdown voltage, and an electrode which overlies and engages said tiny area of said layer of insulating material. The tiny area of the layer of insulating material will normally insulate the electrode from the conductor; but it will respond to a voltage, which is higher than the predetermined breakdown voltage of that tiny area but which is lower than said relatively high breakdown voltage, and which is applied across that electrode and that conductor, to break down and permit an irreversible, low-resistance connection to form between that electrode and that conductor.

Inventors

  • 👤 Siri R Bhola

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 07:29
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/10; H01C7/1013; H10; H10D; H10D99/00; Y; Y10; Y10S; Y10S438/00; Y10S438/981; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49105

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 394 words
The method of making a voltage actuated switch on a selected portion of the area of a substrate of conductive material that comprises: selecting a substrate of conductive material which has a smooth upper surface, forming an insulating layer which overlies and engages all of said selected portion of said substrate, forming said insulating layer so it has a predetermined constant thickness and predetermined resistivity to enable said insulating layer to have a predetermined breakdown voltage and also to have a substantially flat upper surface, removing a predetermined area of said insulating layer to expose all of said selected portion of said substrate of conductive materIal and to form a hole which has the sides thereof defined solely by said insulating layer, forming a further layer of insulating material that is located wholly within said hole, that directly engages said selected portion of said substrate, that overlies the entire bottom of said hole and that extends to and directly engages those portions of said insulating layer which define the sides of said hole, forming said further layer of insulating material so it has an essentially uniform thickness and a substantially flat upper surface, forming said further layer of insulating material so it has a portion of predetermined thickness and predetermined resistivity to enable said portion of said further layer of insulating material to have a second and different predetermined breakdown voltage, forming an electrode that overlies and engages one of said layers of insulating material, forming said one of said layers of insulating material so it has a thickness which is less than the thickness of the other layer of insulating material, whereby said one layer of insulating material has a breakdown voltage which is substantially lower than the breakdown voltage of said other layer of insulating material, forming said one layer of insulating material so it responds to the application of a voltage across said substrate and said electrode, which is greater than said breakdown voltage of said one layer of insulating material but which is less than the breakdown voltage of said other layer of insulating material, to break down and thereby permit an irreversible, low resistance connection to form between said electrode and said substrate, said substrate being formed from silicon, forming said layer of insulating material from silicon dioxide, and forming said further layer of insulating material from silicon dioxide.
Claim 2
Dependent Claim 56 words
The method of making a voltage actuated switch as claimed in claim 1 wherein the thickness of said further but thinner insulating layer is substantially smaller than the thickness of said portion of the first said insulating layer but wherein the ohmic resistance of said further but thinner insulating layer is in excess of one megohm.
Claim 3
Dependent Claim 33 words
The method making a voltage actuated switch as claimed in claim 1 wherein the longest dimension of said further but thinner layer of insulating material is less than 1 hundredth of an inch.
Claim 4
Dependent Claim 38 words
The method of making a voltage actuated switch as claimed in claim 1 wherein each of said substrate and said electrode is formed so it is many times thicker than said further but thinner layer of insulating material.
Claim 5
Dependent Claim 63 words
The method of making a voltage actuated switch as claimed in claim 1 wherein said further but thinner layer of insulating material is dimensioned so the major portion thereof will be converted from an initial high-resistance state to a low-resistance state as said further but thinner layer of insulating material responds to said voltage across said substrate and said electrode to break down.
Claim 6
Independent Claim 438 words
The method of making a voltage actuated switch on a selected portion of the area of a substrate of conductive material that comprises: selecting a substrate of conductive material which has a smooth upper surface, forming an insulating layer which overlies and engages all of said selected portion of said substrate, forming said insulating layer so it has a predetermined constant thickness and predetermined resistivity to enable said insulating layer to have a predetermined breakdown voltage and also to have a substantially flat upper surface, removing a predetermined area of said insulating layer to expose all of said selected portion of said substrate of conductive material and to form a hole which has the sides thereof defined solely by said insulating layer, forming a further layer of insulating material that is located wholly within said hole, that directly engages said selected portion of said substrate, that overlies the entire bottom of said hole, and that extends to and directly engages those portions of said insulating layer which define the sides of said hole, forming said further layer of insulating material so it has an essentially uniform thickness and a substantially flat upper surface, forming said further layer of insulating material so it has a portion of predetermined thickness and predetermined resistivity to enable said portion of said further layer of insulating material to have a second and different predetermined breakdown voltage, forming an electrode that overlies and engages one of said layers of insulating material, forming said one of said layers of insulating material so it has a thickness which is less than the thickness of the other layer of insulating material, whereby said one layer of insulating material has a breakdown voltage which is substantially lower than the breakdown voltage of said other layer of insulating material, forming said one layer of insulating material so it responds to the application of a voltage across said substrate and said electrode, which is greater than said breakdown voltage of said one layer of insulating material but which is less than the breakdown voltage of said other layer of insulating material, to break down and thereby permit an irreversible, low resistance connection to form between said electrode and said substrate, forming said one layer of insulating material so it has a thickness which is substantially smaller than the thickness of said other layer of insulating material, dimensioning said one layer of insulating material so the major portion thereof will be converted from an initial high-resistance state to a low-resistance state as said one layer of insulating material responds to said voltage across said substrate and said electrode to break down.

References Cited (Backward Citations)

US3094650A Cited
US3234442A Cited
US3368919A Cited
US3461436A Cited
US3419765A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1975-09-19 1976-03-20 1976-09-19 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1979-09-19 1980-03-20 1980-09-19 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1983-09-19 1984-03-20 1984-09-19 $7700.00 Window Closed / Lapsed

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