Method of doping semiconductor substrates
Abstract
Abstract THERE IS DISCLOSED A METHOD OF CONTROLLING SURFACE DOPANT CONCENTRATION IN A SEMICONDUCTOR MATERIAL IN WHICH THE DOPANT IS DIFFUSED FROM A DOPED OXIDE SOURCE. THE METHOD INVOLVES THE USE OF AN OXIDIZING AMBIENT DURING THE DOPING OPERATION WHICH CREATES A GROWING INTERFACE OXIDE BARRIER TO MODERATE THE DOPING OF THE SUBSTRATE. CONTROL OF THE PROCESS IS OBTAINED BY ADJUSTING THE PARTICAL PRESSURE OF THE OXIDANT AND BY CONTROLLING THE AMOUNT OF TIME THE SEMICAONDUCTOR MATERIAL IS KEPT IN THE DIFFUSION CHAMBER. THIS PROCESS PERMITS THE USE OF A STANDARD HIGHLY DOPED OXIDE COATING TO ACHIEVE DIFFERENT AND CONTROLLABLE SURFACE CONCENTRATIONS OF DOPANTS DIFFUSED FROM THE DOPED OXIDE INTO THE SEMICONDUCTOR MATERIAL BY CONTROLLING THE RATE OF GROWTH OF THE INERFACE OXIDE BARRIER WHICH RESULTS FROM THE USE OF THE OXIDIZING AMBIENT.
Inventors
- 👤 Robert Guy Hays
- 👤 Ronald Charles Pennell
- 👤 Edwin Emmett Reed
- 👤 Charles Edward Volk
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-09-12 | 1976-03-13 | 1976-09-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-09-12 | 1980-03-13 | 1980-09-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-09-12 | 1984-03-13 | 1984-09-12 | $7700.00 | Window Closed / Lapsed |